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1. (WO2015126087) METHOD FOR MANUFACTURING METAL CHALCOGENIDE THIN FILM AND THIN FILM MANUFACTURED THEREBY
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2015/126087    International Application No.:    PCT/KR2015/001328
Publication Date: 27.08.2015 International Filing Date: 10.02.2015
IPC:
C23C 16/448 (2006.01), C23C 16/56 (2006.01)
Applicants: LG ELECTRONICS INC. [KR/KR]; 128, Yeoui-daero Yeongdeungpo-gu Seoul 150-721 (KR).
RESEARCH & BUSINESS FOUNDATION SUNGKYUNKWAN UNIVERSITY [KR/KR]; Sungkyunkwan Univ. 2066, Seobu-ro, Jangan-gu Suwon-si Gyeonggi-do 440-746 (KR)
Inventors: CHOI, Minseok; (KR).
LEE, Changgu; (KR).
KIM, Youngchan; (KR)
Agent: KIM, Yong In; (KR)
Priority Data:
10-2014-0020276 21.02.2014 KR
Title (EN) METHOD FOR MANUFACTURING METAL CHALCOGENIDE THIN FILM AND THIN FILM MANUFACTURED THEREBY
(FR) PROCÉDÉ DE FABRICATION D'UNE COUCHE MINCE DE CHALCOGÉNURE MÉTALLIQUE ET COUCHE MINCE FABRIQUÉE À L’AIDE DE CELUI-CI
(KO) 금속 칼코게나이드 박막의 제조 방법 및 그 박막
Abstract: front page image
(EN)The present invention relates to the manufacturing of a heteroelement thin film, and particularly to a method for manufacturing a metal chalcogenide thin film and the thin film manufactured thereby. The present invention, which relates to a method for manufacturing a metal chalcogenide thin film, may comprise the steps of: supplying a vaporized metal precursor; supplying a chalcogen-containing gas; and forming a thin film by reacting the metal precursor with the chalcogen-containing gas on a growth substrate at a first temperature condition.
(FR)La présente invention concerne la fabrication d'une couche mince comportant un hétéroélément, et particulièrement un procédé de fabrication d'une couche mince de chalcogénure métallique et la couche mince fabriquée à l’aide de celui-ci. La présente invention, qui concerne un procédé de fabrication d'une couche mince de chalcogénure métallique, peut comprendre les étapes consistant à : fournir un précurseur métallique vaporisé ; fournir un gaz contenant un chalcogène ; et former une couche mince en faisant réagir le précurseur métallique avec le gaz contenant un chalcogène sur un substrat de croissance à une première condition de température.
(KO)본 발명은 이종원소 박막의 제작에 관한 것으로 특히, 금속 칼코게나이드 박막의 제조 방법 및 그 박막에 관한 것이다. 이러한 본 발명은, 금속 칼코게나이드 박막의 제조 방법에 있어서, 기체화된 금속 전구체를 공급하는 단계; 칼코겐 함유 기체를 공급하는 단계; 및 제1온도조건에서 성장 기판 상에 상기 금속 전구체 및 칼코겐 함유 기체를 반응시켜 박막을 형성하는 단계를 포함하여 구성될 수 있다.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG).
Publication Language: Korean (KO)
Filing Language: Korean (KO)