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1. (WO2015126052) METHOD FOR MANUFACTURING TRANSPARENT CONDUCTIVE FILM USING CONDUCTIVE NANOWIRE
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2015/126052    International Application No.:    PCT/KR2014/012743
Publication Date: 27.08.2015 International Filing Date: 23.12.2014
IPC:
H01B 13/00 (2006.01)
Applicants: INFOVION. CO., LTD. [KR/KR]; 7-7, Seonyu-ro 3-gil, Yeongdeungpo-gu, Seoul 150-095 (KR)
Inventors: KIM, Yong-Hwan; (KR).
OH, Jong Seok; (KR)
Agent: LEE, Ji-Yeon; (KR)
Priority Data:
10-2014-0019642 20.02.2014 KR
Title (EN) METHOD FOR MANUFACTURING TRANSPARENT CONDUCTIVE FILM USING CONDUCTIVE NANOWIRE
(FR) PROCÉDÉ DE FABRICATION D'UN FILM CONDUCTEUR TRANSPARENT À L'AIDE DE NANOFILS CONDUCTEURS
(KO) 전도성 나노 와이어를 이용한 투명 도전막의 제조 방법
Abstract: front page image
(EN)The present invention relates to a method for manufacturing a transparent conductive film using a conductive nanowire. The method for manufacturing a transparent conductive film comprises the steps of: subjecting the surface of a substrate to electron beam preprocessing, thereby improving the adhesiveness of the surface of the substrate; forming a buffer layer on the surface of the substrate; forming a coating of an ink composition, which contains conductive nanowires, on the buffer layer; and emitting electron beams to the substrate such that the conductive nanowires are thermally bonded to each other, thereby forming a conductive nanowire network and completing a conductive nanowire layer. According to the present invention, a conductive nanowire layer is completed through emission of electron beams, thereby improving adhesiveness between conductive nanowires, and the degree of close contact between the conductive nanowires and the substrate is improved through the buffer layer and the electron beam preprocessing process, thereby manufacturing a transparent conductive film having excellent electrical conductivity.
(FR)La présente invention concerne un procédé de fabrication d'un film conducteur transparent à l'aide de nanofils conducteurs. Le procédé de fabrication d'un film conducteur transparent comprend les étapes consistant : à soumettre la surface d'un substrat à un prétraitement par faisceau d'électrons, ce qui permet d'améliorer l'adhésivité de la surface du substrat ; à former une couche tampon sur la surface du substrat ; à former un revêtement d'une composition d'encre, qui contient des nanofils conducteurs, sur la couche tampon ; et à émettre des faisceaux d'électrons vers le substrat de manière à souder thermiquement les nanofils conducteurs l'un à l'autre, ce qui permet de former un réseau de nanofils conducteurs et d'achever une couche de nanofils conducteurs. Selon la présente invention, une couche de nanofils conducteurs est achevée par émission de faisceaux d'électrons, ce qui permet d'améliorer l'adhésivité entre les nanofils conducteurs, et le degré de contact intime entre les nanofils conducteurs et le substrat est amélioré par la couche tampon et le processus de prétraitement par faisceau d'électrons, ce qui permet de fabriquer un film conducteur transparent possédant une excellente conductivité électrique.
(KO)본 발명은 전도성 나노 와이어를 이용한 투명 도전막 제조 방법에 관한 것이다. 상기 투명 도전막 제조 방법은, 기판 표면에 전자빔 전처리하여 기판 표면의 접착력을 향상시키는 단계, 기판의 표면에 버퍼층 형성하는 단계, 상기 버퍼층위에 전도성 나노 와이어들을 함유한 잉크 조성물을 코팅하는 단계, 상기 기판으로 전자빔 조사하여 전도성 나노 와이어들을 서로 융착시켜 전도성 나노 와이어 네트워크를 형성하여 전도성 나노 와이어 층을 완성하는 단계를 구비한다. 본 발명은 전자빔 조사하여 전도성 나노 와이어층을 완성함으로써, 전도성 나노 와이어들간의 접착력을 향상시키고, 버퍼층과 전자빔 전처리 과정을 통해 전도성 나노 와이어와 기판과의 밀착력을 향상시켜, 전기 전도성이 우수한 투명 도전막을 제조할 수 있게 된다.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG).
Publication Language: Korean (KO)
Filing Language: Korean (KO)