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1. (WO2015125471) FIELD-EFFECT TRANSISTOR

Pub. No.:    WO/2015/125471    International Application No.:    PCT/JP2015/000750
Publication Date: Fri Aug 28 01:59:59 CEST 2015 International Filing Date: Thu Feb 19 00:59:59 CET 2015
IPC: H01L 21/337
H01L 21/338
H01L 27/098
H01L 29/778
H01L 29/808
H01L 29/812
Applicants: PANASONIC CORPORATION
パナソニック株式会社
Inventors: KAJITANI, Ryo
梶谷 亮
TANAKA, Kenichiro
田中 健一郎
ISHIDA, Masahiro
石田 昌宏
UEDA, Tetsuzo
上田 哲三
Title: FIELD-EFFECT TRANSISTOR
Abstract:
A sheet resistance of a field-effect transistor is reduced. A channel layer, first spacer layer, second spacer layer, first electronic barrier layer, and second electronic barrier layer are sequentially grown on a main surface of a substrate. Then, a gate recess section is formed, and an ion-implanted section is formed. Then, a third electronic barrier layer and a p-type layer are formed using an MOCVD method again. Then, a p-type layer portion excluding a portion on the gate recess section is removed. Then, ions are implanted to the regrown third electronic barrier layer, and an ion-implanted section is formed again by implanting B ions. Then, a source electrode and a drain electrode are sequentially formed on the third electronic barrier layer. Then, a gate electrode is formed on the p-type layer.