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1. (WO2015123074) METHOD AND APPARATUS FOR THREE DIMENSIONAL ION IMPLANTATION
Latest bibliographic data on file with the International Bureau   

Pub. No.: WO/2015/123074 International Application No.: PCT/US2015/014533
Publication Date: 20.08.2015 International Filing Date: 05.02.2015
IPC:
H01L 21/265 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
26
Bombardment with wave or particle radiation
263
with high-energy radiation
265
producing ion implantation
Applicants:
VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. [US/US]; 35 Dory Road Gloucester, Massachusetts 01930, US
Inventors:
CHANG, Shengwu; US
Agent:
DAISAK, Daniel N.; US
Priority Data:
14/179,98813.02.2014US
Title (EN) METHOD AND APPARATUS FOR THREE DIMENSIONAL ION IMPLANTATION
(FR) PROCÉDÉ ET APPAREIL D'IMPLANTATION IONIQUE TRIDIMENSIONNELLE
Abstract:
(EN) A scan system for processing a substrate with an ion beam may include a scanner to receive the ion beam having a shape of a ribbon beam, the ribbon beam having a beam width along a first axis and beam height along a second axis that is perpendicular to the first axis, the beam width being at least three times greater than the beam height; and a scan power supply to send signals to the scanner to generate a deflecting field that deflects the ribbon beam along the second axis.
(FR) L'invention concerne un système de balayage destiné à traiter un substrat avec un faisceau d'ions, qui peut comprendre un dispositif de balayage pour recevoir le faisceau d'ions ayant la forme d'un faisceau en ruban, le faisceau en ruban ayant une largeur de faisceau le long d'un premier axe et une hauteur de faisceau le long d'un second axe qui est perpendiculaire au premier axe, la largeur de faisceau étant au moins trois fois plus grande que la hauteur de faisceau ; et une alimentation électrique de balayage pour envoyer des signaux au dispositif de balayage afin de générer un champ de déviation qui dévie le faisceau en ruban le long du second axe.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)