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Machine translation
1. (WO2015122963) DUAL INTERFACE FREE LAYER WITH AMORPHOUS CAP LAYER FOR PERPENDICULAR MAGNETIC TUNNEL JUNCTION
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2015/122963    International Application No.:    PCT/US2014/071258
Publication Date: 20.08.2015 International Filing Date: 18.12.2014
Chapter 2 Demand Filed:    23.11.2015    
IPC:
G11C 11/16 (2006.01)
Applicants: QUALCOMM INCORPORATED [US/US]; ATTN: International IP Administration 5775 Morehouse Drive San Diego, California 92121 (US)
Inventors: PARK, Chando; (US).
LEE, Kangho; (US).
KANG, Seung Hyuk; (US)
Agent: LENKIN, Alan M.; (US)
Priority Data:
14/179,502 12.02.2014 US
Title (EN) DUAL INTERFACE FREE LAYER WITH AMORPHOUS CAP LAYER FOR PERPENDICULAR MAGNETIC TUNNEL JUNCTION
(FR) DOUBLE COUCHE LIBRE D'INTERFACE COMPORTANT UNE COUCHE D'ENCAPSULATION AMORPHE POUR JONCTION TUNNEL MAGNÉTIQUE PERPENDICULAIRE
Abstract: front page image
(EN)A magnetic tunnel junction (MTJ) and methods for fabricating a MTJ are described. An MTJ (200) includes a fixed layer (114) and a barrier layer (116) on the fixed layer (114). Such an MTJ (200) also includes a free layer (118) interfacing with the barrier layer (116). The free layer (118) has a crystal structure in accordance with the barrier layer (116). The MTJ (200) further includes an amorphous capping layer (120) interfacing with the free layer (118).
(FR)L'invention concerne une jonction tunnel magnétique (JTM) et des procédés de fabrication d'une JTM. Une JTM (200) comprend une couche fixe (114) et une couche barrière (116) sur la couche fixe (114). Une JTM (200) de ce type comprend également une couche libre (118) en interface avec la couche barrière (116). La couche libre (118) présente une structure cristalline fonction de la couche barrière (116). La JTM (200) comprend en outre une couche d'encapsulation amorphe (120) en interface avec la couche libre (118).
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)