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1. (WO2015122652) LIGHT-EMITTING DIODE PRODUCTION METHOD USING NANOSTRUCTURE TRANSFER, AND LIGHT-EMITTING DIODE OBTAINED THEREBY

Pub. No.:    WO/2015/122652    International Application No.:    PCT/KR2015/001222
Publication Date: Fri Aug 21 01:59:59 CEST 2015 International Filing Date: Sat Feb 07 00:59:59 CET 2015
IPC: H01L 33/20
Applicants: POSTECH ACADEMY-INDUSTRY FOUNDATION
포항공과대학교 산학협력단
Inventors: YOO, Chul-Jong
유철종
LEE, Jong-lam
이종람
Title: LIGHT-EMITTING DIODE PRODUCTION METHOD USING NANOSTRUCTURE TRANSFER, AND LIGHT-EMITTING DIODE OBTAINED THEREBY
Abstract:
The present invention relates to a light-emitting diode production method and to a light-emitting diode obtained thereby, and more specifically relates to a method wherein a nanostructure is coated uniformly over a wide surface area by means of spherical nanostructure transfer and wherein a light-emitting diode is produced in which the light-extraction efficiency is maximised by means of the coating, and relates to a light-emitting diode having outstanding light-extraction efficiency produced by the method. The present invention concerns a production method for a light-emitting diode in which a first semiconductor layer, an active layer and a second semiconductor layer are formed, wherein the method comprises: a step of coating a spherical nanostructure onto a first substrate; a step of transferring the nanostructure from the first substrate, which has been coated with the nanostructure, onto a second substrate; a step of transferring the nanostructure, which has been transferred onto the second substrate, onto the second semiconductor layer; and a step of forming an uneven portion by dry etching the second semiconductor layer by using a mask constituted by the nanostructure which has been transferred onto the second semiconductor layer.