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1. (WO2015122417) SINTERED OXIDE AND SPUTTERING TARGET
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2015/122417    International Application No.:    PCT/JP2015/053710
Publication Date: 20.08.2015 International Filing Date: 10.02.2015
IPC:
C04B 35/00 (2006.01), C04B 35/457 (2006.01), C23C 14/34 (2006.01), H01L 21/363 (2006.01)
Applicants: KOBELCO RESEARCH INSTITUTE, INC. [JP/JP]; 1-5-1, Wakinohama-kaigan-dori, Chuo-ku, Kobe-shi, Hyogo 6510073 (JP).
KABUSHIKI KAISHA KOBE SEIKO SHO (KOBE STEEL, LTD.) [JP/JP]; 2-4, Wakinohama-Kaigandori 2-chome, Chuo-ku, Kobe-shi, Hyogo 6518585 (JP)
Inventors: TAO Yuki; .
HATA Hideo; .
HIROSE Kenta; .
JIKO Norihiro; .
OCHI Mototaka;
Agent: EIKOH PATENT FIRM, P.C.; Toranomon East Bldg. 10F, 7-13, Nishi-Shimbashi 1-chome, Minato-ku, Tokyo 1050003 (JP)
Priority Data:
2014-026835 14.02.2014 JP
Title (EN) SINTERED OXIDE AND SPUTTERING TARGET
(FR) OXYDE FRITTÉ ET CIBLE DE PULVÉRISATION CATHODIQUE
(JA) 酸化物焼結体およびスパッタリングターゲット
Abstract: front page image
(EN)A sintered oxide obtained by sintering indium oxide, gallium oxide, and tin oxide, having a relative density of at least 90%, having a ratio of less than 10% of course crystal grains having an average crystal grain diameter of 3-10 µm in the Ga2In6Sn2O16 phase, having an In, Ga, and Sn content ratio, relative to the total amount of metal elements, that satisfy 35 at.% ≤ [In] ≤ 50 at.%, 20 at.% [Ga] ≤ 35 at.%, 20 at.% < [Sn] ≤ 40 at.%, and having a Ga3InSn5O16 phase whereby 0.02 ≤ [Ga3InSn5O16] ≤ 0.2.
(FR)La présente invention concerne un oxyde fritté obtenu par frittage de l'oxyde d'indium, de l'oxyde de gallium, et de l'oxyde d'étain, de densité relative d'au moins 90 %, de rapport inférieur à 10 % de grains cristallins grossiers ayant un diamètre moyen de grain cristallin compris entre 3 et 10 µm dans la phase Ga2In6Sn2O16, de proportion en In, Ga et Sn, par rapport à la quantité totale d'éléments métalliques, satisfaisant à 35% at. ≤ [In] ≤ 50% at., 20% at. [Ga] ≤ 35% at., 20% at. < [Sn] ≤ 40% at., et comportant une phase Ga3InSn5O16 pour laquelle 0,02 ≤ [Ga3InSn5O16] ≤ 0,2.
(JA) 酸化インジウム、酸化ガリウム及び酸化錫を焼結して得られ、相対密度が90%以上、GaInSn16相の平均結晶粒径が3μm以下、10μm以上の粗大結晶粒の割合が10%未満、全金属元素に対するIn、Ga、Snの含有量の割合が、35原子%≦[In]≦50原子%、20原子%≦[Ga]≦35原子%、20原子%<[Sn]≦40原子%、GaInSn16相が0.02≦[GaInSn16]≦0.2である。
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG).
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)