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1. (WO2015122367) INTEGRATED SEMICONDUCTOR LASER ELEMENT AND SEMICONDUCTOR LASER MODULE
Latest bibliographic data on file with the International Bureau   

Pub. No.: WO/2015/122367 International Application No.: PCT/JP2015/053366
Publication Date: 20.08.2015 International Filing Date: 06.02.2015
IPC:
H01S 5/026 (2006.01) ,H01S 5/12 (2006.01) ,H01S 5/125 (2006.01) ,H01S 5/343 (2006.01) ,H01S 5/50 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
S
DEVICES USING STIMULATED EMISSION
5
Semiconductor lasers
02
Structural details or components not essential to laser action
026
Monolithically integrated components, e.g. waveguides, monitoring photo-detectors or drivers
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
S
DEVICES USING STIMULATED EMISSION
5
Semiconductor lasers
10
Construction or shape of the optical resonator
12
the resonator having a periodic structure, e.g. in distributed feed-back lasers (DFB-lasers)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
S
DEVICES USING STIMULATED EMISSION
5
Semiconductor lasers
10
Construction or shape of the optical resonator
12
the resonator having a periodic structure, e.g. in distributed feed-back lasers (DFB-lasers)
125
Distributed Bragg reflector lasers (DBR-lasers)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
S
DEVICES USING STIMULATED EMISSION
5
Semiconductor lasers
30
Structure or shape of the active region; Materials used for the active region
34
comprising quantum well or superlattice structures, e.g. single quantum well lasers (SQW-lasers), multiple quantum well lasers (MQW-lasers), graded index separate confinement heterostructure lasers (GRINSCH-lasers)
343
in AIIIBV compounds, e.g. AlGaAs-laser
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
S
DEVICES USING STIMULATED EMISSION
5
Semiconductor lasers
50
Amplifier structures not provided for in groups H01S5/02-H01S5/30100
Applicants:
古河電気工業株式会社 FURUKAWA ELECTRIC CO., LTD. [JP/JP]; 東京都千代田区丸の内二丁目2番3号 2-3, Marunouchi 2-chome, Chiyoda-ku, Tokyo 1008322, JP
Inventors:
清田 和明 KIYOTA, Kazuaki; JP
小林 剛 KOBAYASHI, Go; JP
Agent:
酒井 宏明 SAKAI, Hiroaki; JP
Priority Data:
2014-02596413.02.2014JP
Title (EN) INTEGRATED SEMICONDUCTOR LASER ELEMENT AND SEMICONDUCTOR LASER MODULE
(FR) ÉLÉMENT LASER À SEMI-CONDUCTEURS INTÉGRÉS ET MODULE LASER À SEMI-CONDUCTEURS
(JA) 集積型半導体レーザ素子および半導体レーザモジュール
Abstract:
(EN) An integrated semiconductor laser element which is obtained by integrating, on a substrate, a semiconductor laser and a semiconductor optical amplifier that amplifies output laser light of the semiconductor laser, and which is characterized in that: the semiconductor laser comprises a first active layer; the semiconductor optical amplifier comprises a second active layer; the first active layer and the second active layer have a multiple quantum well structure; and the second active layer has more number of quantum wells than the first active layer. Consequently, there can be achieved: an integrated semiconductor laser element which has output laser light having a narrow spectral line width and a high intensity; and a semiconductor laser module.
(FR) La présente invention concerne un élément laser à semi-conducteurs intégrés qui est obtenu par intégration, sur un substrat, d'un laser à semi-conducteurs et d'un amplificateur optique à semi-conducteurs qui amplifie une lumière laser de sortie du laser à semi-conducteurs, et qui est caractérisé en ce que : le laser à semi-conducteurs comprend une première couche active ; l'amplificateur optique à semi-conducteurs comprend une seconde couche active ; la première couche active et la seconde couche active présentent une structure à puits quantiques multiples ; et la seconde couche active comporte un plus grand nombre de puits quantiques que la première couche active. Par conséquent, l'invention permet d'obtenir : un élément laser à semi-conducteurs intégrés qui présente une lumière laser de sortie ayant une largeur de raie spectrale étroite et une intensité élevée ; et un module laser à semi-conducteurs.
(JA)  半導体レーザと、前記半導体レーザの出力レーザ光を増幅する半導体光増幅器と、を基板上に集積した集積型半導体レーザ素子であって、前記半導体レーザは、第1活性層を含み、前記半導体光増幅器は、第2活性層を含み、前記第1活性層および前記第2活性層は、多重量子井戸構造を有し、前記第2活性層は、前記第1活性層よりも量子井戸の数が多いことを特徴とする集積型半導体レーザ素子。これにより、出力レーザ光のスペクトル線幅が狭く、かつ高強度な集積型半導体レーザ素子および半導体レーザモジュールを実現することができる。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)