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Machine translation
1. (WO2015122223) HANDLE SUBSTRATE OF COMPOSITE SUBSTRATE FOR SEMICONDUCTOR, AND COMPOSITE SUBSTRATE FOR SEMICONDUCTOR
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2015/122223    International Application No.:    PCT/JP2015/050576
Publication Date: 20.08.2015 International Filing Date: 13.01.2015
IPC:
H01L 21/02 (2006.01)
Applicants: NGK INSULATORS, LTD. [JP/JP]; 2-56, Suda-cho, Mizuho-ku, Nagoya-shi, Aichi 4678530 (JP)
Inventors: MIYAZAWA Sugio; (JP).
IWASAKI Yasunori; (JP).
TAKAGAKI Tatsuro; (JP).
IDE Akiyoshi; (JP).
NAKANISHI Hirokazu; (JP)
Agent: HOSODA Masutoshi; (JP)
Priority Data:
2014-024544 12.02.2014 JP
Title (EN) HANDLE SUBSTRATE OF COMPOSITE SUBSTRATE FOR SEMICONDUCTOR, AND COMPOSITE SUBSTRATE FOR SEMICONDUCTOR
(FR) SUBSTRAT DE MANIPULATION DE SUBSTRAT COMPOSITE POUR SEMI-CONDUCTEUR ET SUBSTRAT COMPOSITE POUR SEMI-CONDUCTEUR
(JA) 半導体用複合基板のハンドル基板および半導体用複合基板
Abstract: front page image
(EN)The handle substrate (1) of a composite substrate for semiconductors which is constituted of polycrystalline alumina. The peripheral part (8) of the handle substrate (1) has an average grain diameter of 20-55 µm. The central part (20) of the handle substrate has an average grain diameter of 10-50 µm. The average grain diameter of the peripheral part (8) of the handle substrate is 1.1-3.0 times the average grain diameter of the central part (20).
(FR)L'invention concerne un substrat de manipulation (1) d'un substrat composite pour semi-conducteurs qui est constitué d'alumine polycristalline. Le diamètre de grain moyen de la partie périphérique (8) du substrat de manipulation (1) est compris entre 20 et 55 µm. Le diamètre de grain moyen de la partie centrale (20) du substrat de manipulation est compris entre 10 et 50 µm. Le diamètre de grain moyen de la partie périphérique (8) du substrat de manipulation représente 1,1 à 3,0 fois le diamètre de grain moyen de la partie centrale (20).
(JA)半導体用複合基板のハンドル基板1が多結晶アルミナにより形成されており、ハンドル基板1の外周縁部8の平均粒径が20~55μmであり、ハンドル基板の中央部20の平均粒径が10~50μmであり、ハンドル基板の外周縁部8の平均粒径が中央部20の平均粒径の1.1倍以上、3.0倍以下である。
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG).
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)