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1. (WO2015122049) METHOD FOR MANUFACTURING INSULATED GATE SWITCHING ELEMENT, AND INSULATED GATE SWITCHING ELEMENT
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2015/122049    International Application No.:    PCT/JP2014/076721
Publication Date: 20.08.2015 International Filing Date: 06.10.2014
IPC:
H01L 29/78 (2006.01), H01L 21/336 (2006.01), H01L 29/12 (2006.01)
Applicants: TOYOTA JIDOSHA KABUSHIKI KAISHA [JP/JP]; 1, Toyota-cho, Toyota-shi, Aichi 4718571 (JP) (AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BE, BF, BG, BH, BJ, BN, BR, BW, BY, BZ, CA, CF, CG, CH, CI, CL, CM, CN, CO, CR, CU, CY, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, FR, GA, GB, GD, GE, GH, GM, GN, GQ, GR, GT, GW, HN, HR, HU, ID, IE, IL, IN, IR, IS, IT, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LV, LY, MA, MC, MD, ME, MG, MK, ML, MN, MR, MT, MW, MX, MY, MZ, NA, NE, NG, NI, NL, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SI, SK, SL, SM, SN, ST, SV, SY, SZ, TD, TG, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, UZ, VC, VN, ZA, ZM, ZW only).
DENSO CORPORATION [JP/JP]; 1-1, Showa-cho, Kariya-shi, Aichi 4488661 (JP) (AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BE, BF, BG, BH, BJ, BN, BR, BW, BY, BZ, CA, CF, CG, CH, CI, CL, CM, CN, CO, CR, CU, CY, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, FR, GA, GB, GD, GE, GH, GM, GN, GQ, GR, GT, GW, HN, HR, HU, ID, IE, IL, IN, IR, IS, IT, KE, KG, KM, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LV, LY, MA, MC, MD, ME, MG, MK, ML, MN, MR, MT, MW, MX, MY, MZ, NA, NE, NG, NI, NL, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SI, SK, SL, SM, SN, ST, SV, SY, SZ, TD, TG, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, UZ, VC, VN, ZA, ZM, ZW only).
SOENO Akitaka; (JP) (US only).
TAKEUCHI Yuichi; (JP) (US only).
SOEJIMA Narumasa; (JP) (US only)
Inventors: SOENO Akitaka; (JP).
TAKEUCHI Yuichi; (JP).
SOEJIMA Narumasa; (JP)
Agent: KAI-U PATENT LAW FIRM; NAGOYA LUCENT TOWER 9F, 6-1, Ushijima-cho,Nishi-ku, Nagoya-shi, Aichi 4516009 (JP)
Priority Data:
2014-027750 17.02.2014 JP
Title (EN) METHOD FOR MANUFACTURING INSULATED GATE SWITCHING ELEMENT, AND INSULATED GATE SWITCHING ELEMENT
(FR) PROCÉDÉ DE FABRICATION D'UN ÉLÉMENT DE COMMUTATION À GÂCHETTE ISOLÉE, ET ÉLÉMENT DE COMMUTATION À GÂCHETTE ISOLÉE
(JA) 絶縁ゲート型スイッチング素子を製造する方法及び絶縁ゲート型スイッチング素子
Abstract: front page image
(EN)This method for manufacturing an insulated gate switching element has: a step for forming a second conductivity-type second region (27) in a surface of a semiconductor substrate by implanting a second conductivity-type impurity in the surface; a step for forming a second conductivity-type third region (26) on the surface by means of epitaxial growing, said third region having a lower second conductivity-type impurity concentration than the second region (27); and a step for forming a trench gate electrode (34b).
(FR)L'invention concerne un procédé de fabrication d'un élément de commutation à gâchette isolée comprenant les étapes suivantes : formation d'une deuxième région d'un deuxième type de conductivité (27) dans une surface d'un substrat en semiconducteur en implantant une impureté du deuxième type de conductivité dans la surface ; formation d'une troisième région d'un deuxième type de conductivité (26) sur la surface au moyen de la croissance épitaxiale, ladite troisième région possédant une concentration d'impuretés du deuxième type de conductivité plus faible que la deuxième région (27) ; et formation d'une électrode de gâchette en tranchée (34b).
(JA)【解決手段】 絶縁ゲート型スイッチング素子を製造する方法であって、半導体基板の表面に第2導電型不純物を注入することによってその表面に第2導電型の第2領域27を形成する工程と、その表面上に第2領域27よりも第2導電型不純物濃度が低い第2導電型の第3領域26をエピタキシャル成長により形成する工程と、レンチゲート電極34bを形成する工程を有する。
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG).
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)