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1. (WO2015121905) TUNNEL MAGNETORESISTIVE EFFECT ELEMENT MANUFACTURING METHOD AND SPUTTERING APPARATUS

Pub. No.:    WO/2015/121905    International Application No.:    PCT/JP2014/005729
Publication Date: Fri Aug 21 01:59:59 CEST 2015 International Filing Date: Sat Nov 15 00:59:59 CET 2014
IPC: H01L 43/12
C23C 14/08
C23C 14/34
G11B 5/39
H01F 10/32
H01F 41/18
H01L 21/8246
H01L 27/105
H01L 43/08
Applicants: CANON ANELVA CORPORATION
キヤノンアネルバ株式会社
Inventors: OTANI, Yuichi
大谷 裕一
SEINO, Takuya
清野 拓哉
Title: TUNNEL MAGNETORESISTIVE EFFECT ELEMENT MANUFACTURING METHOD AND SPUTTERING APPARATUS
Abstract:
To reduce variance of characteristics, such as an electric resistance value, in a substrate surface, in the cases of forming a film on a substrate by means of a sputtering method using an insulating material target. This tunnel magnetoresistive effect element manufacturing method implements: a first film-forming step for forming a film by sputtering a first insulating material target when a projection surface of the first insulating material target is in a first state, said projection surface being a part of a plane including a front surface of the substrate; and a second film-forming step for forming a film by sputtering a second insulating material target when the projection surface of the second insulating material target is in a second state that is different from the first state, said projection surface being the part of the plane including the front surface of the substrate. The second film-forming step is implemented such that an insulating film exhibiting a second characteristic change having inverse characteristics with respect to a first characteristic change is obtained at least in a substrate part from a center portion to a peripheral portion of the substrate, said first characteristic change being generated from the substrate center portion to the substrate peripheral portion of the film obtained in the first film-forming step.