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1. (WO2015121198) DICING METHOD
Latest bibliographic data on file with the International Bureau   

Pub. No.: WO/2015/121198 International Application No.: PCT/EP2015/052645
Publication Date: 20.08.2015 International Filing Date: 09.02.2015
IPC:
H01L 21/768 (2006.01) ,H01L 21/78 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70
Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
71
Manufacture of specific parts of devices defined in group H01L21/7086
768
Applying interconnections to be used for carrying current between separate components within a device
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70
Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
77
Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
78
with subsequent division of the substrate into plural individual devices
Applicants:
AMS AG [AT/AT]; Schloss Premstätten Tobelbader Str. 30 A-8141 Unterpremstätten, AT
Inventors:
SCHREMS, Martin; AT
STERING, Bernhard; AT
SCHRANK, Franz; AT
Agent:
EPPING HERMANN FISCHER PATENTANWALTSGESELLSCHAFT MBH; Schloßschmidstr. 5 80639 München, DE
Priority Data:
14155240.614.02.2014EP
Title (EN) DICING METHOD
(FR) PROCEDE DE DECOUPAGE EN DES
Abstract:
(EN) The dicing method comprises the steps of providing a substrate (1) of semiconductor material, the substrate having a main surface (10), where integrated components (3) of chips (13) are arranged, and a rear surface (11) opposite the main surface, fastening a first handling wafer above the main surface, thinning the substrate at the rear surface, and forming trenches (20) penetrating the substrate and separating the chips by a single etching step after the substrate has been thinned.
(FR) L'invention concerne un procédé de découpage en dés, qui comporte les étapes consistant à : fournir un substrat (1) de matériau semi-conducteur, le substrat comportant une surface principale (10) sur laquelle des composants intégrés (3) de puces (13) sont aménagés, et une surface arrière (11), opposée à la surface principale ; fixer une première plaquette de manipulation au-dessus de la surface principale ; amincir le substrat au niveau de la surface arrière ; et former des tranchées (20) pénétrant dans le substrat et séparer les puces par la mise en oeuvre d'une seule étape de gravure, après que le substrat a été aminci.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)