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1. (WO2015120664) SEMICONDUCTOR RADIATOR
Latest bibliographic data on file with the International Bureau   

Pub. No.: WO/2015/120664 International Application No.: PCT/CN2014/076369
Publication Date: 20.08.2015 International Filing Date: 28.04.2014
IPC:
H01L 23/38 (2006.01) ,H01L 23/427 (2006.01) ,H01L 23/467 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23
Details of semiconductor or other solid state devices
34
Arrangements for cooling, heating, ventilating or temperature compensation
38
Cooling arrangements using the Peltier effect
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23
Details of semiconductor or other solid state devices
34
Arrangements for cooling, heating, ventilating or temperature compensation
42
Fillings or auxiliary members in containers selected or arranged to facilitate heating or cooling
427
Cooling by change of state, e.g. use of heat pipes
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23
Details of semiconductor or other solid state devices
34
Arrangements for cooling, heating, ventilating or temperature compensation
46
involving the transfer of heat by flowing fluids
467
by flowing gases, e.g. air
Applicants:
谷静一 GU, Jingyi [CN/CN]; CN
Inventors:
谷静一 GU, Jingyi; CN
Agent:
北京品源专利代理有限公司 BEYOND ATTORNEYS AT LAW; 中国北京市 海淀区莲花池东路39号西金大厦6层 F6, Xijin Centre 39 Lianhuachi East Rd., Haidian District Beijing 100036, CN
Priority Data:
201410051343.015.02.2014CN
Title (EN) SEMICONDUCTOR RADIATOR
(FR) RADIATEUR À SEMI-CONDUCTEUR
(ZH) 一种半导体散热器
Abstract:
(EN) A semiconductor radiator comprises a hollow heat-separation platform (2) and a lower heat-conducting connection base (3) disposed separately on an upper end surface and a lower end surface of a through hole of a hard insulation heat-separation substrate (1). The lower heat-conducting connection base (3) is provided with a boss that penetrates through the through-hole and is fitted to the cavity of the hollow heat-separation platform. The top surface of the boss is attached to the bottom surface of a semiconductor cooling piece (5) disposed on the top portion of the hollow heat-separation platform. An upper heat-conducting connection base (6) is attached to the top surface of the semiconductor cooling piece. The semiconductor radiator has effects of preventing dust and integrally dissipating heat, and improves the heat dissipation efficiency.
(FR) L'invention concerne un radiateur à semi-conducteur comprenant une plate-forme de séparation thermique creuse (2) et une base de connexion thermo-conductrice (3) disposées séparément sur la surface d'extrémité supérieure et la surface d'extrémité inférieure d'un trou traversant de substrat de séparation thermique à isolation rigide (1). La base de connexion thermo-conductrice (3) comprend un bossage qui pénètre à travers le trou traversant et est adapté à la cavité de la plate-forme de séparation thermique creuse. La surface supérieure du bossage est fixée à la surface inférieure d'un élément de refroidissement à semi-conducteur (5) disposé sur la partie supérieure de la plate-forme de séparation thermique creuse. Une base de connexion thermo-conductrice supérieure (6) est fixée à la surface supérieure de l'élément de refroidissement à semi-conducteur. Le radiateur à semi-conducteur présente des effets permettant d'éviter la poussière et de dissiper intégralement la chaleur, et d'améliorer l'efficacité de dissipation de chaleur.
(ZH) 一种半导体体散热器,包括:在硬质绝缘隔热基板(1)上的通孔的上下两端面分别设置的中空隔热台(2)和下导热连接基座(3),下导热连接基座上设置有贯穿通孔且与中空隔热台的腔体相配合的凸台,凸台的顶面与设置在中空隔热台顶部的半导体制冷片(5)的底面相贴合,半导体制冷片的顶面上贴有上导热连接基座(6)。具有防尘和集中散热的效果,并提升了散热效率。
front page image
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Chinese (ZH)
Filing Language: Chinese (ZH)