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1. (WO2015120424) SELECTIVE, ELECTROCHEMICAL ETCHING OF A SEMICONDUCTOR
Latest bibliographic data on file with the International Bureau   

Pub. No.: WO/2015/120424 International Application No.: PCT/US2015/015112
Publication Date: 13.08.2015 International Filing Date: 10.02.2015
IPC:
H01L 21/00 (2006.01) ,H01L 21/46 (2006.01) ,H01L 21/465 (2006.01)
Applicants: RENSSELAER POLYTECHNIC INSTITUTE[US/US]; 110 8th Street Troy, New York 12180, US
Inventors: DAHAL, Rajendra P.; US
BHAT, Ishwara B.; US
CHOW, Tat-Sing; US
Agent: RADIGAN, Kevin P.; US
Priority Data:
61/937,73610.02.2014US
Title (EN) SELECTIVE, ELECTROCHEMICAL ETCHING OF A SEMICONDUCTOR
(FR) GRAVURE ÉLECTROCHIMIQUE SÉLECTIVE D'UN SEMI-CONDUCTEUR
Abstract: front page image
(EN) Methods for facilitating fabricating semiconductor structures are provided which include: providing a multilayer structure including a semiconductor layer, the semiconductor layer including a dopant and having an increased conductivity; selectively increasing, using electrochemical processing, porosity of the semiconductor layer, at least in part, the selectively increasing porosity utilizing the increased conductivity of the semiconductor layer; and removing, at least in part, the semiconductor layer with the selectively increased porosity from the multilayer structure. By way of example, the selectively increasing porosity may include selectively, anodically oxidizing, at least in part, the semiconductor layer of the multilayer structure.
(FR) L'invention concerne des procédés permettant de faciliter la fabrication de structures semi-conductrices, lesdits procédés consistant à : fournir une structure multicouche comprenant une couche semi-conductrice, la couche semi-conductrice comprenant un dopant et présentant une conductivité accrue ; augmenter de façon sélective, à l'aide d'un traitement électrochimique, la porosité de la couche semi-conductrice, au moins en partie, la porosité qui augmente de façon sélective utilisant la conductivité accrue de la couche semi-conductrice ; et retirer, au moins en partie, la couche semi-conductrice présentant la porosité accrue de manière sélective de la structure multicouche. À titre d'exemple, la porosité qui augmente de façon sélective peut comprendre l'oxydation anodique et sélective, au moins en partie, de la couche semi-conductrice de la structure multicouche.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)