WIPO logo
Mobile | Deutsch | Español | Français | 日本語 | 한국어 | Português | Русский | 中文 | العربية |
PATENTSCOPE

Search International and National Patent Collections
World Intellectual Property Organization
Search
 
Browse
 
Translate
 
Options
 
News
 
Login
 
Help
 
Machine translation
1. (WO2015119572) METHOD OF PULSED LASER-BASED LARGE AREA GRAPHENE SYNTHESIS ON METALLIC AND CRYSTALLINE SUBSTRATES
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2015/119572    International Application No.:    PCT/SG2015/000029
Publication Date: 13.08.2015 International Filing Date: 04.02.2015
IPC:
C01B 31/02 (2006.01), C01B 31/04 (2006.01), B82Y 40/00 (2011.01), B82B 3/00 (2006.01)
Applicants: NATIONAL UNIVERSITY OF SINGAPORE [SG/SG]; 21 Lower Kent Ridge Road Singapore 119077 (SG)
Inventors: OZYILMAZ, Barbaros; (SG).
STIER, Andreas Volker; (SG).
TOH, Chee Tat; (SG).
CASTRO NETO, Antonio Helio; (SG)
Agent: AMICA LAW LLC; 30 Raffles Place, #14-01 Chevron House Singapore 048622 (SG)
Priority Data:
61/935,535 04.02.2014 US
62/020,527 03.07.2014 US
Title (EN) METHOD OF PULSED LASER-BASED LARGE AREA GRAPHENE SYNTHESIS ON METALLIC AND CRYSTALLINE SUBSTRATES
(FR) PROCÉDÉ DE SYNTHÈSE DE GRAPHÈNE EN GRANDES SURFACES PAR LASER À IMPULSIONS SUR SUBSTRATS MÉTALLIQUES ET CRISTALLINS
Abstract: front page image
(EN)A method of making graphene includes providing a seed gas in the presence of a metallic substrate, providing a pulsed, ultraviolet laser beam, and moving the substrate or the laser beam relative to the other, thereby advancing a graphene crystallization front and forming an ordered graphene structure. In some instances, the substrate can have a surface with two-fold atomic symmetry. A method of recrystallizing graphene includes providing a pulsed, ultraviolet laser beam to a polycrystalline graphene sheet.
(FR)La présente invention concerne un procédé de production de graphène consistant à fournir un germe gazeux en présence d'un substrat métallique, fournir un faisceau laser ultraviolet pulsé et déplacer le substrat ou le faisceau laser l'un par rapport à l'autre, ce qui permet de faire avancer un front de cristallisation de graphène et de former une structure de graphène ordonnée. Dans certains cas, le substrat peut avoir une surface présentant une symétrie atomique à deux plis. L'invention concerne un procédé de recristallisation de graphène comprenant l'application d'un faisceau laser ultraviolet pulsé à une feuille de graphène polycristallin.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)