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1. (WO2015119418) IMAGE SENSOR AND METHOD FOR MANUFACTURING SAME
Latest bibliographic data on file with the International Bureau   

Pub. No.: WO/2015/119418 International Application No.: PCT/KR2015/001125
Publication Date: 13.08.2015 International Filing Date: 04.02.2015
IPC:
H01L 27/146 (2006.01)
Applicants: RAYENCE CO., LTD[KR/KR]; (Seokwoo-dong)14, Samsung 1-ro 1-gil Hwaseong-si Gyeonggi-do 445-170, KR
IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY)[KR/KR]; 115Ho, IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY), 222, Wangsimni-ro Seongdong-gu Seoul 133-791, KR
Inventors: JUN, Seung-Ik; KR
KIM, Myeong-Ho; KR
JANG, Han-Bin; KR
CHOI, Duck-Kyun; KR
CHOI, Myeong-Jea; KR
Agent: NEIT INTERNATIONAL PATENT AND LAW FIRM; (4F, Susan building) 16, Teheran-ro 6-gil Gangnam-gu Seoul 135-080, KR
Priority Data:
10-2014-001269504.02.2014KR
Title (EN) IMAGE SENSOR AND METHOD FOR MANUFACTURING SAME
(FR) CAPTEUR D'IMAGE ET SON PROCÉDÉ DE FABRICATION
(KO) 이미지센서 및 이의 제조방법
Abstract: front page image
(EN) The purpose of the present invention is to provide a scheme for preventing any damage to an oxide semiconductor and thereby improving electric characteristics. The present invention provides an image sensor comprising: a source electrode and a drain electrode; an oxide semiconductor layer contacting the source electrode and the drain electrode; a gate insulation film formed on the oxide semiconductor layer; a gate electrode formed on the gate insulation film; and a photodiode connected to the drain electrode.
(FR) Le but de la présente invention est de décrire une technique visant à empêcher tout dommage à un oxyde semi-conducteur et d'améliorer ainsi les caractéristiques électriques. La présente invention concerne un capteur d'image comprenant : une électrode source et une électrode drain; une couche d'oxyde semi-conducteur en contact avec l'électrode source et l'électrode drain; un film d'isolation de grille formé sur la couche d'oxyde semi-conducteur; une électrode de grille formée sur le film d'isolation de grille; et une photodiode connectée à l'électrode drain.
(KO) 본 발명은 산화물반도체의 손상을 방지하여 전기적 특성을 향상시킬 수 있는 방안을 제공하는 데 과제가 있다. 본 발명은 소스전극 및 드레인전극과; 상기 소스전극 및 드레인전극과 접촉하는 산화물반도체층과; 상기 산화물반도체층 상에 형성된 게이트절연막과; 상기 게이트절연막 상에 형성된 게이트전극과; 상기 드레인전극과 연결되는 포토다이오드를 포함하는 이미지센서를 제공한다.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Korean (KO)
Filing Language: Korean (KO)