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1. (WO2015117800) METHOD OF PRODUCING A SEMICONDUCTOR DEVICE WITH PROTRUDING CONTACTS

Pub. No.:    WO/2015/117800    International Application No.:    PCT/EP2015/050592
Publication Date: Aug 13, 2015 International Filing Date: Jan 14, 2015
IPC: G01N 27/12
Applicants: AMS AG
Inventors: KRAFT, Jochen
ROHRACHER, Karl
SCHREMS, Martin
Title: METHOD OF PRODUCING A SEMICONDUCTOR DEVICE WITH PROTRUDING CONTACTS
Abstract:
A wiring (3) comprising electrical conductors (4, 5, 6, 7) is formed in a dielectric layer (2) on or above a semiconductor substrate (1), an opening is formed in the dielectric layer to uncover a contact pad (8), which is formed by one of the conductors, and a further opening is formed in the dielectric layer to uncover an area of a further conductor (5), separate from the contact pad. The further opening is filled with an electrically conductive material (9), and the dielectric layer is thinned from a side opposite the substrate, so that the electrically conductive material protrudes from the dielectric layer.