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1. (WO2015115769) METHOD FOR PREPARING SUBSTRATE USING GERMANIUM CONDENSATION PROCESS AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING SAME
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2015/115769    International Application No.:    PCT/KR2015/000829
Publication Date: 06.08.2015 International Filing Date: 27.01.2015
IPC:
H01L 21/20 (2006.01), H01L 27/12 (2006.01)
Applicants: IUCF-HYU [KR/KR]; (c/o Hanyang Univ., Haendang-dong) 222, Wangsimni-ro, Sungdong-Gu, Seoul 133-791 (KR)
Inventors: PARK, Jea Gun; (KR).
SHIM, Tea Hun; (KR).
SONG, Seung Hyun; (KR).
LEE, Du Yeong; (KR)
Agent: NAM, Seung-Hee; (KR)
Priority Data:
10-2014-0010290 28.01.2014 KR
Title (EN) METHOD FOR PREPARING SUBSTRATE USING GERMANIUM CONDENSATION PROCESS AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING SAME
(FR) PROCÉDÉ DE PRÉPARATION D'UN SUBSTRAT À L'AIDE D'UN PROCESSUS DE CONDENSATION DE GERMANIUM ET PROCÉDÉ DE FABRICATION D'UN DISPOSITIF À SEMI-CONDUCTEUR L'UTILISANT
(KO) 게르마늄 응축 공정을 이용한 기판 제조 방법 및 이를 이용한 반도체 소자의 제조 방법
Abstract: front page image
(EN)Disclosed is a method for preparing a substrate and a method for manufacturing a semiconductor device using the same, the method for preparing a substrate comprising the steps of: providing a SOI structure in which an insulating layer and a silicon layer are laminated on the substrate; laminating and forming a silicon germanium layer and a capping silicon layer on the SOI structure; performing an oxidation process at at least two or more temperatures; performing at least one heat treatment process during the oxidation process to form a germanium condensation layer and a silicon oxide layer; and removing the silicon oxide layer.
(FR)L'invention concerne un procédé de préparation d'un substrat et un procédé de fabrication d'un dispositif semi-conducteur l'utilisant, le procédé de préparation d'un substrat comprenant les étapes consistant : à utiliser une structure silicium sur isolant (SOI) dans laquelle une couche isolante et une couche de silicium sont stratifiées sur le substrat; à stratifier et à former une couche de silicium-germanium et une couche de silicium de couverture sur la structure SOI; à effectuer un processus d'oxydation à au moins deux températures ou plus; à effectuer au moins un processus de traitement thermique pendant le processus d'oxydation pour former une couche de condensation de germanium et une couche d'oxyde de silicium; à éliminer la couche d'oxyde de silicium.
(KO)본 발명은 기판 상에 절연층 및 실리콘층이 적층된 SOI 구조가 제공되는 단계와, SOI 구조 상에 실리콘 게르마늄층 및 캐핑 실리콘층을 적층 형성하는 단계와, 적어도 둘 이상의 온도에서 산화 공정을 실시하고, 상기 산화 공정 중에 적어도 1회의 열처리 공정을 실시하여 게르마늄 응집층 및 산화 실리콘층을 형성하는 단계와, 산화 실리콘층을 제거하는 단계를 포함하는 기판 제조 방법 및 이를 이용한 반도체 소자의 제조 방법을 제시한다.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG).
Publication Language: Korean (KO)
Filing Language: Korean (KO)