WIPO logo
Mobile | Deutsch | Español | Français | 日本語 | 한국어 | Português | Русский | 中文 | العربية |
PATENTSCOPE

Search International and National Patent Collections
World Intellectual Property Organization
Search
 
Browse
 
Translate
 
Options
 
News
 
Login
 
Help
 
Machine translation
1. (WO2015115665) BONDED STRUCTURE AND METHOD FOR PRODUCING BONDED STRUCTURE
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2015/115665    International Application No.:    PCT/JP2015/052999
Publication Date: 06.08.2015 International Filing Date: 03.02.2015
IPC:
H01L 21/52 (2006.01), H01L 23/12 (2006.01), H01L 23/14 (2006.01)
Applicants: OSAKA UNIVERSITY [JP/JP]; 1-1, Yamadaoka, Suita-shi, Osaka 5650871 (JP)
Inventors: SUGANUMA Katsuaki; (JP).
NAGAO Shijo; (JP).
OH Chulmin; (JP)
Agent: MAEI Hiroyuki; (JP)
Priority Data:
2014-018163 03.02.2014 JP
Title (EN) BONDED STRUCTURE AND METHOD FOR PRODUCING BONDED STRUCTURE
(FR) STRUCTURE LIÉE ET PROCÉDÉ DE PRODUCTION DE STRUCTURE LIÉE
(JA) 接合構造体、及び接合構造体の製造方法
Abstract: front page image
(EN)This bonded structure (100) is provided with a substrate (110), a metal film (120) and a semiconductor element (130). The substrate (110), the metal film (120) and the semiconductor element (130) are sequentially laminated in this order. A metal that constitutes the metal film (120) is diffused by stress migration, and the substrate (110) and the semiconductor element (130) are bonded with each other by means of the metal film (120) interposed therebetween.
(FR)Ladite structure liée (100) présente un substrat (110), un film métallique (120) et un élément semi-conducteur. Le substrat (110), le film métallique (120) et l'élément semi-conducteur (130) sont séquentiellement stratifiés dans cet ordre. Un métal qui constitue le film métallique (120) est diffusé par migration sous contrainte, et le substrat (110) et l'élément semi-conducteur (120) sont liés l'un à l'autresà l'aide du film métallique (120) interposé entre eux.
(JA) 本発明の接合構造体(100)は、基板(110)と、金属膜(120)と、半導体素子(130)とを備える。基板(110)、金属膜(120)、および、半導体素子(130)は、この順番に積層されている。前記金属膜(120)を構成する金属はストレスマイグレーションによって拡散したものであり、前記基板(110)と前記半導体素子(130)とが前記金属膜(120)を介して接合されている。
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG).
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)