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1. (WO2015115399) STRUCTURE PROVIDED WITH CARBON FILM AND METHOD FOR FORMING CARBON FILM
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2015/115399    International Application No.:    PCT/JP2015/052130
Publication Date: 06.08.2015 International Filing Date: 27.01.2015
IPC:
C01B 31/02 (2006.01), C23C 16/26 (2006.01), C23C 16/56 (2006.01), H01M 8/02 (2006.01)
Applicants: TAIYO YUDEN CHEMICAL TECHNOLOGY CO., LTD. [JP/JP]; 2947-1, Kuragano-machi, Takasaki-shi, Gunma 3701201 (JP)
Inventors: SHIBUSAWA Kunihiko; (JP)
Agent: MURAKOSHI Satoshi; (JP)
Priority Data:
2014-013340 28.01.2014 JP
Title (EN) STRUCTURE PROVIDED WITH CARBON FILM AND METHOD FOR FORMING CARBON FILM
(FR) STRUCTURE AYANT UN FILM DE CARBONE ET PROCÉDÉ DE FORMATION D'UN FILM CARBONÉ
(JA) 炭素膜を備える構造体及び炭素膜を形成する方法
Abstract: front page image
(EN)A structure according to one embodiment of the present invention has a carbon film, the surface of which is provided with a microrelief structure regardless of the shape of the surface of a base. This structure is provided with a base and a carbon film that is formed on the base and contains carbon, or carbon and hydrogen. At least a part of the surface of this carbon film has a microrelief structure that is formed by means of irradiation of ions and/or radicals (for example, plasma) of oxygen and/or Ar. This microrelief structure has a ten-point average roughness (Rz) of 20 nm or more.
(FR)L'invention concerne une structure selon un mode de réalisation de la présente invention ayant un film carboné, dont la surface comporte une structure à microreliefs quelle que soit la forme de la surface d'une base. Cette structure est munie d'une base et d'un film carboné qui est formé sur la base et qui contient du carbone, ou du carbone et de l'hydrogène. Au moins une partie de la surface de ce film carboné a une structure à microreliefs qui est formée par irradiation d'ions et/ou de radicaux (par exemple, du plasma) d'oxygène et/ou d'Ar. Cette structure à microreliefs a une rugosité moyenne d'après dix points (Rz) de 20nm ou plus.
(JA) 本発明の一実施形態における構造体は、基材表面の形状に依存することなく炭素膜の表面に微細な凹凸構造を形成する。この構造体は、基材と、この基材上に形成され、炭素、又は、炭素及び水素を含む炭素膜と、を備え、この炭素膜の表面の少なくとも一部は、酸素及び/又はArのイオン及び/又はラジカル(例えば、プラズマ)を照射することによって形成された微細な凹凸構造を有する。この微細な凹凸構造は、十点平均粗さRzが20nm以上である。
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG).
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)