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1. (WO2015115266) NITRIDE SEMICONDUCTOR ELEMENT

Pub. No.:    WO/2015/115266    International Application No.:    PCT/JP2015/051480
Publication Date: Fri Aug 07 01:59:59 CEST 2015 International Filing Date: Thu Jan 22 00:59:59 CET 2015
IPC: H01L 21/205
H01L 31/0236
H01L 33/16
H01L 33/22
H01L 33/32
Applicants: SHARP KABUSHIKI KAISHA
シャープ株式会社
Inventors: KOMADA, Satoshi
駒田 聡
Title: NITRIDE SEMICONDUCTOR ELEMENT
Abstract:
This nitride semiconductor element comprises a substrate provided with a surface having protrusions and recesses, a nitride semiconductor underlayer present on the substrate, and a nitride semiconductor function layer present on the nitride semiconductor underlayer. The nitride semiconductor under-layer includes, as the face, a surface having protrusions and recesses, said surface being composed of inclined surfaces that are inclined at an angle of 50 to 65° to the C plane. The nitride semiconductor function layer is provided on the nitride semiconductor underlayer surface which has protrusions and recesses.