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1. (WO2015115202) SILICON CARBIDE SEMICONDUCTOR DEVICE AND SILICON CARBIDE SEMICONDUCTOR DEVICE MANUFACTURING METHOD
Latest bibliographic data on file with the International Bureau   

Pub. No.: WO/2015/115202 International Application No.: PCT/JP2015/051015
Publication Date: 06.08.2015 International Filing Date: 16.01.2015
IPC:
H01L 29/78 (2006.01) ,H01L 21/20 (2006.01) ,H01L 21/205 (2006.01) ,H01L 21/28 (2006.01) ,H01L 21/336 (2006.01) ,H01L 29/12 (2006.01) ,H01L 29/47 (2006.01) ,H01L 29/872 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
68
controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76
Unipolar devices
772
Field-effect transistors
78
with field effect produced by an insulated gate
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
20
Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
20
Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
205
using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
28
Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/268158
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
334
Multistep processes for the manufacture of devices of the unipolar type
335
Field-effect transistors
336
with an insulated gate
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
02
Semiconductor bodies
12
characterised by the materials of which they are formed
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
40
Electrodes
43
characterised by the materials of which they are formed
47
Schottky barrier electrodes
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
86
controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated, or switched
861
Diodes
872
Schottky diodes
Applicants:
三菱電機株式会社 MITSUBISHI ELECTRIC CORPORATION [JP/JP]; 東京都千代田区丸の内二丁目7番3号 7-3, Marunouchi 2-chome, Chiyoda-ku, Tokyo 1008310, JP
Inventors:
富永 貴亮 TOMINAGA Takaaki; JP
川畑 直之 KAWABATA Naoyuki; JP
冨田 信之 TOMITA Nobuyuki; JP
Agent:
吉竹 英俊 YOSHITAKE Hidetoshi; JP
Priority Data:
2014-01288028.01.2014JP
2014-15861504.08.2014JP
Title (EN) SILICON CARBIDE SEMICONDUCTOR DEVICE AND SILICON CARBIDE SEMICONDUCTOR DEVICE MANUFACTURING METHOD
(FR) DISPOSITIF À SEMI-CONDUCTEUR AU CARBURE DE SILICIUM ET PROCÉDÉ DE FABRICATION DE DISPOSITIF À SEMI-CONDUCTEUR AU CARBURE DE SILICIUM
(JA) 炭化珪素半導体装置及び炭化珪素半導体装置の製造方法
Abstract:
(EN) The present technology relates to a silicon carbide semiconductor device and a silicon carbide semiconductor device manufacturing method whereby it is possible to achieve lower on-resistance and high breakdown voltage. This silicon carbide semiconductor device comprises a silicon carbide substrate (1), and a drift layer (2). The drift layer further comprises a breakdown voltage holding layer which extends from a point whereat a doping concentration is a prescribed value to the surface of the drift layer. The doping concentration of the breakdown voltage holding layer declines continuously from the point whereat the doping concentration is the prescribed value to a modulation point located further toward the surface of the drift layer (2) than an intermediate point in the film thickness direction of the breakdown voltage holding layer, and increases continuously from the modulation point to the surface of the drift layer.
(FR) L'invention concerne un dispositif à semi-conducteur au carbure de silicium et un procédé de fabrication de dispositif à semi-conducteur au carbure de silicium moyennant lequel il est possible d'obtenir une résistance à l'état passant plus basse et une tension de claquage élevée. Le dispositif à semi-conducteur au carbure de silicium comprend un substrat de carbure de silicium (1) et une couche de dérive (2). La couche de dérive comprend en outre une couche de maintien de tension de claquage qui s'étend à partir d'un point au niveau duquel une concentration de dopage est une valeur prescrite jusqu'à la surface de la couche de dérive. La concentration de dopage de la couche de maintien de tension de claquage baisse de façon continue à partir du point au niveau duquel la concentration de dopage est la valeur prescrite jusqu'à un point de modulation situé plus loin vers la surface de la couche de dérive (2) qu'un point intermédiaire dans la direction d'épaisseur de film de la couche de maintien de tension de claquage, et augmente de façon continue à partir du point de modulation jusqu'à la surface de la couche de dérive.
(JA)  本技術は、オン抵抗の低減及び高耐圧を実現することができる炭化珪素半導体装置及び炭化珪素半導体装置の製造方法に関する。炭化珪素半導体装置は、炭化珪素基板1とドリフト層2とを備える。ドリフト層は、ドーピング濃度が所定の値となる地点からドリフト層の表面に亘る耐圧保持層を有し、耐圧保持層のドーピング濃度は、ドーピング濃度が所定の値となる地点から耐圧保持層の膜厚方向における中間点よりもドリフト層2の表面側に位置する変調点までは連続的に低下し、変調点からドリフト層の表面までは連続的に増加する。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)