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1. (WO2015114923) SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE

Pub. No.:    WO/2015/114923    International Application No.:    PCT/JP2014/081063
Publication Date: Fri Aug 07 01:59:59 CEST 2015 International Filing Date: Wed Nov 26 00:59:59 CET 2014
IPC: H01L 21/822
H01L 27/04
Applicants: ALPS ELECTRIC CO., LTD.
アルプス電気株式会社
Inventors: SAITO, Junichi
斉藤 潤一
SAWATAISHI, Tomoyuki
澤田石 智之
Title: SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
Abstract:
[Problem] To provide a semiconductor integrated circuit device wherein a reverse current due to erroneous connection or the like of signal lines is eliminated, and unnecessary power loss of a circuit can be suppressed in a normal operation state. [Solution] In the cases of abnormal states wherein an output voltage (VOUT) is lower than a ground potential (VSS) due to erroneous connection or the like, an N-type DMOS transistor (Qd1) and a first P-type MOS transistor (Qp1) are turned off, a voltage is applied in the reverse direction to the parasitic diodes of the transistors, and a current does not flow in the parasitic diodes. In a normal state wherein the output voltage (VOUT) is higher than the ground potential (VSS), the N-type DMOS transistor (Qd1) and/or the first P-type MOS transistor (Qp1) is turned on, said N-type DMOS transistor and first P-type MOS transistor being connected in parallel, and a current does not flow in a parasitic diode (D1) of the N-type DMOS transistor (Qd1).