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1. (WO2015114896) FILM-FORMING APPARATUS AND SUBSTRATE HOLDER USED THEREIN
Latest bibliographic data on file with the International Bureau   

Pub. No.: WO/2015/114896 International Application No.: PCT/JP2014/078600
Publication Date: 06.08.2015 International Filing Date: 28.10.2014
IPC:
H01L 21/205 (2006.01) ,C23C 16/458 (2006.01) ,H01L 21/683 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
20
Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
205
using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16
Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
44
characterised by the method of coating
458
characterised by the method used for supporting substrates in the reaction chamber
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67
Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
683
for supporting or gripping
Applicants:
東京エレクトロン株式会社 TOKYO ELECTRON LIMITED [JP/JP]; 東京都港区赤坂五丁目3番1号 3-1 Akasaka 5-chome, Minato-ku, Tokyo 1076325, JP
Inventors:
森崎 英介 MORISAKI Eisuke; JP
町山 弥 MACHIYAMA Wataru; JP
小林 洋克 KOBAYASHI Hirokatsu; JP
原島 正幸 HARASHIMA Masayuki; JP
佐野 志生 SANO Yukio; JP
Agent:
高山 宏志 TAKAYAMA Hiroshi; JP
Priority Data:
2014-01313728.01.2014JP
Title (EN) FILM-FORMING APPARATUS AND SUBSTRATE HOLDER USED THEREIN
(FR) APPAREIL DE FORMATION DE FILM ET PORTE-SUBSTRAT UTILISÉ DANS CELUI-CI
(JA) 成膜装置およびそれに用いる基板ホルダー
Abstract:
(EN) This film-forming apparatus for forming compound semiconductor films on substrates performs film formation by supplying a processing gas to the inside of a processing container, while heating a plurality of substrates (W) with heat generated by inductively heating a substrate holder (34) in a state wherein the substrate holder (34) is holding the substrates (W) in the processing container. The substrate holder (34) has a plurality of recessed sections (37) for holding and aligning the substrates (W), said recessed sections being aligned in the circumferential direction, and between the recessed sections (37) adjacent to each other, connecting recessed sections (38) for connecting the recessed sections are formed.
(FR) L'invention concerne un appareil de formation de film qui est destiné à former des films à semi-conducteur mixte sur des substrats, et qui réalise une formation de film en fournissant un gaz de traitement à l'intérieur d'un contenant de traitement, tout en chauffant une pluralité de substrats (W) avec de la chaleur générée par la chauffe inductive d'un porte-substrat (34) dans un état dans lequel le porte-substrat (34) maintient les substrats (W) dans le contenant de traitement. Le porte-substrat (34) comprend une pluralité de section évidées (37) permettant de maintenir et d'aligner les substrats (W), lesdites sections évidées étant alignées dans la direction circonférentielle, et des sections évidées de raccordement (38) destinées à raccorder les sections évidées sont formées entre les sections évidées (37) adjacentes les unes aux autres.
(JA)  基板上に化合物半導体膜を成膜する成膜装置は、処理容器内で基板ホルダー(34)に複数の基板(W)を保持した状態で、基板ホルダー(34)を誘導加熱してその熱で基板(W)を加熱しつつ、処理容器内に処理ガスを供給して成膜を行う。基板ホルダー(34)は、周方向に沿って配列された、基板(W)を収容して位置決めするための複数の凹部(37)を有し、凹部(37)の隣接するものどうしの間には、これらを連結する連結凹部(38)が形成されている。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)