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1. (WO2015114870) GAS SENSOR

Pub. No.:    WO/2015/114870    International Application No.:    PCT/JP2014/073376
Publication Date: Fri Aug 07 01:59:59 CEST 2015 International Filing Date: Fri Sep 05 01:59:59 CEST 2014
IPC: G01N 27/00
H01L 21/336
H01L 29/41
H01L 29/786
Applicants: SHARP KABUSHIKI KAISHA
シャープ株式会社
Inventors: NAKANO Fumiki
中野 文樹
Title: GAS SENSOR
Abstract:
A gas sensor (100) has: a detection element (1A) including a first TFT (5A); and a detection circuit section (1B) including a second TFT (5B). The first TFT (5A) is provided with: a gate electrode (12A); a gate insulating layer (20); an oxide semiconductor layer (5A) overlapping the gate electrode; and a source electrode (16A) and a drain electrode (18A), which are provided to face each other with a channel section of the oxide semiconductor layer therebetween. The second TFT (5B) is provided with: semiconductor layers (14B, 15B); a gate electrode (12B) overlapping the semiconductor layer in a state of being insulated from the semiconductor layer; and a source electrode (16B) and a drain electrode (18B), which are provided to face each other with a channel section of the semiconductor layer therebetween. A protective insulating layer (22) is provided as an upper layer of the oxide semiconductor layer, and has disposed thereon a conductive layer (30), which covers at least the channel section of the semiconductor layer of the second TFT (5B), and which does not cover the oxide semiconductor layer of the first TFT (5A).