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1. (WO2015105836) MAGNETORESISTANCE ELEMENT WITH AN IMPROVED SEED LAYER TO PROMOTE AN IMPROVED RESPONSE TO MAGNETIC FIELDS
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2015/105836 International Application No.: PCT/US2015/010424
Publication Date: 16.07.2015 International Filing Date: 07.01.2015
IPC:
G01R 33/09 (2006.01) ,H01F 10/30 (2006.01) ,H01F 10/32 (2006.01) ,H01L 43/10 (2006.01) ,H01L 43/12 (2006.01)
G PHYSICS
01
MEASURING; TESTING
R
MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
33
Arrangements or instruments for measuring magnetic variables
02
Measuring direction or magnitude of magnetic fields or magnetic flux
06
using galvano-magnetic devices
09
Magneto-resistive devices
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
F
MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
10
Thin magnetic films, e.g. of one-domain structure
26
characterised by the substrate or intermediate layers
30
characterised by the composition of intermediate layers
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
F
MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
10
Thin magnetic films, e.g. of one-domain structure
32
Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
43
Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
10
Selection of materials
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
43
Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
12
Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
Applicants:
ALLEGRO MICROSYSTEMS, LLC [US/US]; 115 Northeast Cutoff Worcester, Massachusetts 01606, US
Inventors:
DRESSLER, Cyril; FR
FERMON, Claude; FR
PANNETIER-LECOEUR, Myriam; FR
CYRILLE, Marie-Claire; FR
CAMPIGLIO, Paolo; FR
Agent:
ROBINSON, Kermit; US
Priority Data:
61/925,44609.01.2014US
Title (EN) MAGNETORESISTANCE ELEMENT WITH AN IMPROVED SEED LAYER TO PROMOTE AN IMPROVED RESPONSE TO MAGNETIC FIELDS
(FR) ÉLÉMENT À MAGNÉTORÉSISTANCE AYANT UNE COUCHE GERME AMÉLIORÉE POUR FAVORISER UNE MEILLEURE RÉPONSE AUX CHAMPS MAGNÉTIQUES
Abstract:
(EN) A magnetoresistance element and a method of fabricating same, the element comprising a substrate, a seed layer structure and a free layer structure, the former including at least a ferromagnetic seed layer promoting an increased magnetic anisotropy of the layers of the magnetoresistance element which are deposited above said seed layer structure.
(FR) L'invention concerne un élément à magnétorésistance et un procédé de fabrication de celui-ci qui comprend un substrat, une structure de couche germe et une structure de couche libre, la structure antérieure comprenant au moins une couche germe ferromagnétique qui favorise une anisotropie magnétique améliorée des couches de l'élément à magnétorésistance qui sont déposées au-dessus de la structure de couche germe.
front page image
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)
Also published as:
EP3092505KR1020160106681JP2017505537