WO2015105830 MAGNETORESISTANCE ELEMENT WITH IMPROVED RESPONSE TO MAGNETIC FIELDS

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Publication Number WO/2015/105830

Publication Date 16.07.2015

International Application No. PCT/US2015/010417

International Filing Date 07.01.2015

IPC

CPC

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Applicants

ALLEGRO MICROSYSTEMS, LLC [US]/[US]

Inventors

FERMON, Claude
PANNETIER-LECOEUR, Myriam
CYRILLE, Marie-Claire
DRESSLER, Cyril
CAMPIGLIO, Paolo

Agents

ROBINSON, Kermit

Priority Data

14/452,783		06.08.2014		US
61/925,446		09.01.2014		US

Publication Language English (en)

Filing Language English (EN)

Designated States

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Title

(EN) MAGNETORESISTANCE ELEMENT WITH IMPROVED RESPONSE TO MAGNETIC FIELDS

(FR) ELEMENT A EFFET DE MAGNETORESISTANCE A REPONSE AMELIOREE AUX CHAMPS MAGNETIQUES

Abstract

(EN) A magnetoresistance element has a double pinned arrangement with two antiferromagnetic pinning layers, two pinned layers, and a free layer. A spacer layer between one of the two antiferromagnetic pinning layers and the free layer has a material selected to allow a controllable partial pinning by the one of the two antiferromagnetic pinning layers.

(FR) La présente invention concerne un élément à effet de magnétorésistance comportant un agencement à deux broches avec deux couches de brochage anti-ferromagnétiques, deux couches brochées, et une couche libre. Une couche d'écartement entre l'une des deux couches de brochage anti-ferromagnétiques et la couche libre comprend un matériau choisi pour permettre un brochage partiel contrôlable par une des deux couches de brochage anti-ferromagnétiques.

G	PHYSICS
01	MEASURING; TESTING
R	MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
33	Arrangements or instruments for measuring magnetic variables
02	Measuring direction or magnitude of magnetic fields or magnetic flux
06	using galvano-magnetic devices
09	Magneto-resistive devices

H	ELECTRICITY
01	BASIC ELECTRIC ELEMENTS
F	MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
10	Thin magnetic films, e.g. of one-domain structure
26	characterised by the substrate or intermediate layers
30	characterised by the composition of intermediate layers

H	ELECTRICITY
01	BASIC ELECTRIC ELEMENTS
F	MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
10	Thin magnetic films, e.g. of one-domain structure
32	Spin-exchange-coupled multilayers, e.g. nanostructured superlattices

H	ELECTRICITY
01	BASIC ELECTRIC ELEMENTS
L	SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
43	Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
10	Selection of materials

H	ELECTRICITY
01	BASIC ELECTRIC ELEMENTS
L	SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
43	Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
12	Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof

Processing

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1. WO2015105830 - MAGNETORESISTANCE ELEMENT WITH IMPROVED RESPONSE TO MAGNETIC FIELDS

G	PHYSICS
11	INFORMATION STORAGE
B	INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
5	Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
127	Structure or manufacture of heads, e.g. inductive
33	Structure or manufacture of flux-sensitive heads, ; i.e. for reproduction only; Combination of such heads with means for recording or erasing only
39	using magneto-resistive devices ; or effects
3996	large or giant magnetoresistive effects [GMR], e.g. as generated in spin-valve [SV] devices

H	ELECTRICITY
01	BASIC ELECTRIC ELEMENTS
F	MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
10	Thin magnetic films, e.g. of one-domain structure
32	Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
324	Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
3268	the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn
3272	by use of anti-parallel coupled [APC] ferromagnetic layers, e.g. artificial ferrimagnets [AFI], artificial [AAF] or synthetic [SAF] anti-ferromagnets

H	ELECTRICITY
01	BASIC ELECTRIC ELEMENTS
F	MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
41	Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
14	for applying magnetic films to substrates
30	for applying nanostructures, e.g. by molecular beam epitaxy [MBE]
302	for applying spin-exchange-coupled multilayers, e.g. nanostructured superlattices
305	applying the spacer or adjusting its interface, e.g. in order to enable particular effect different from exchange coupling
306	conductive spacer