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1. (WO2015105830) MAGNETORESISTANCE ELEMENT WITH IMPROVED RESPONSE TO MAGNETIC FIELDS
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2015/105830 International Application No.: PCT/US2015/010417
Publication Date: 16.07.2015 International Filing Date: 07.01.2015
IPC:
G01R 33/09 (2006.01) ,H01F 10/30 (2006.01) ,H01F 10/32 (2006.01) ,H01L 43/10 (2006.01) ,H01L 43/12 (2006.01)
G PHYSICS
01
MEASURING; TESTING
R
MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
33
Arrangements or instruments for measuring magnetic variables
02
Measuring direction or magnitude of magnetic fields or magnetic flux
06
using galvano-magnetic devices
09
Magneto-resistive devices
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
F
MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
10
Thin magnetic films, e.g. of one-domain structure
26
characterised by the substrate or intermediate layers
30
characterised by the composition of intermediate layers
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
F
MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
10
Thin magnetic films, e.g. of one-domain structure
32
Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
43
Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
10
Selection of materials
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
43
Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
12
Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
Applicants:
ALLEGRO MICROSYSTEMS, LLC [US/US]; 115 Northeast Cutoff Worcester, Massachusetts 01606, US
Inventors:
FERMON, Claude; FR
PANNETIER-LECOEUR, Myriam; FR
CYRILLE, Marie-Claire; FR
DRESSLER, Cyril; FR
CAMPIGLIO, Paolo; FR
Agent:
ROBINSON, Kermit; US
Priority Data:
14/452,78306.08.2014US
61/925,44609.01.2014US
Title (EN) MAGNETORESISTANCE ELEMENT WITH IMPROVED RESPONSE TO MAGNETIC FIELDS
(FR) ELEMENT A EFFET DE MAGNETORESISTANCE A REPONSE AMELIOREE AUX CHAMPS MAGNETIQUES
Abstract:
(EN) A magnetoresistance element has a double pinned arrangement with two antiferromagnetic pinning layers, two pinned layers, and a free layer. A spacer layer between one of the two antiferromagnetic pinning layers and the free layer has a material selected to allow a controllable partial pinning by the one of the two antiferromagnetic pinning layers.
(FR) La présente invention concerne un élément à effet de magnétorésistance comportant un agencement à deux broches avec deux couches de brochage anti-ferromagnétiques, deux couches brochées, et une couche libre. Une couche d'écartement entre l'une des deux couches de brochage anti-ferromagnétiques et la couche libre comprend un matériau choisi pour permettre un brochage partiel contrôlable par une des deux couches de brochage anti-ferromagnétiques.
front page image
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)
Also published as:
KR1020160106682EP3090272JP2017504208