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1. WO2015064663 - SPIN CONTROL MECHANISM AND SPIN DEVICE

Publication Number WO/2015/064663
Publication Date 07.05.2015
International Application No. PCT/JP2014/078816
International Filing Date 29.10.2014
IPC
H01L 29/82 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
82controllable by variation of the magnetic field applied to the device
B81B 5/00 2006.01
BPERFORMING OPERATIONS; TRANSPORTING
81MICROSTRUCTURAL TECHNOLOGY
BMICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
5Devices comprising elements which are movable in relation to each other, e.g. comprising slidable or rotatable elements
H01L 35/14 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
35Thermoelectric devices comprising a junction of dissimilar materials, i.e. exhibiting Seebeck or Peltier effect with or without other thermoelectric effects or thermomagnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
12Selection of the material for the legs of the junction
14using inorganic compositions
H01L 37/00 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
37Thermoelectric devices without a junction of dissimilar materials; Thermomagnetic devices, e.g. using Nernst-Ettinghausen effect; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
H01L 43/08 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
43Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
08Magnetic-field-controlled resistors
CPC
B81B 5/00
BPERFORMING OPERATIONS; TRANSPORTING
81MICROSTRUCTURAL TECHNOLOGY
BMICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
5Devices comprising elements which are movable in relation to each other, e.g. comprising slidable or rotatable elements
H01L 23/3675
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
34Arrangements for cooling, heating, ventilating or temperature compensation ; ; Temperature sensing arrangements
36Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
367Cooling facilitated by shape of device
3675characterised by the shape of the housing
H01L 37/00
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
37Thermoelectric devices without a junction of dissimilar materials; Thermomagnetic devices, e.g. using Nernst-Ettinghausen effect; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof
H01L 43/02
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
43Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
02Details
H01L 43/08
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
43Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
08Magnetic-field-controlled resistors
H02K 49/06
HELECTRICITY
02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
KDYNAMO-ELECTRIC MACHINES
49Dynamo-electric clutches; Dynamo-electric brakes
06of the synchronous type
Applicants
  • 国立研究開発法人科学技術振興機構 JAPAN SCIENCE AND TECHNOLOGY AGENCY [JP]/[JP]
  • ユニヴァーシティー オブ ヨーク THE UNIVERSITY OF YORK [GB]/[GB]
Inventors
  • 廣畑 貴文 HIROHATA Atsufumi
Agents
  • 長谷川 芳樹 HASEGAWA Yoshiki
Priority Data
2013-22715331.10.2013JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) SPIN CONTROL MECHANISM AND SPIN DEVICE
(FR) MÉCANISME DE COMMANDE DE SPIN ET DISPOSITIF À SPIN
(JA) スピン制御機構及びスピンデバイス
Abstract
(EN)
A spin control mechanism is provided with a spin section and a first channel section. The spin section has a reversible or rotatable magnetic moment. The first channel section is provided so as to be in contact with the spin section, is ferromagnetic, and is configured from an insulator. A spin current that is generated by a temperature gradient that is applied to the first channel section is used to control the orientation of the magnetic moment of the spin section.
(FR)
L'invention concerne un mécanisme de commande de spin qui est pourvu d'une section à spin et d'une première section de canal. La section à spin possède un moment magnétique réversible ou rotatif. La première section de canal est disposée de manière à être en contact avec la section à spin, est ferromagnétique et est configurée à partir d'un isolant. Un courant de spin, qui est généré par un gradient de température qui est appliqué à la première section de canal, est utilisé pour commander l'orientation du moment magnétique de la section à spin.
(JA)
 スピン制御機構は、スピン部及び第1チャネル部を備える。スピン部は、反転可能又は回転可能な磁気モーメントを有する。第1チャネル部は、スピン部に接触して設けられ、強磁性かつ絶縁体で構成される。そして、第1チャネル部に与えられた温度勾配によって発生するスピン流を用いて、スピン部の磁気モーメントの向きを制御する。
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