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1. (WO2015048708) HIGH POWER RF CIRCUIT
Latest bibliographic data on file with the International Bureau   

Pub. No.: WO/2015/048708 International Application No.: PCT/US2014/058193
Publication Date: 02.04.2015 International Filing Date: 30.09.2014
IPC:
H01L 23/15 (2006.01) ,H01P 11/00 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23
Details of semiconductor or other solid state devices
12
Mountings, e.g. non-detachable insulating substrates
14
characterised by the material or its electrical properties
15
Ceramic or glass substrates
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
P
WAVEGUIDES; RESONATORS, LINES OR OTHER DEVICES OF THE WAVEGUIDE TYPE
11
Apparatus or processes specially adapted for manufacturing waveguides or resonators, lines, or other devices of the waveguide type
Applicants:
ANAREN, INC. [US/US]; 6635 Kirkville Road PO Box 178 East Syracuse, NY 13057, US
Inventors:
MEI, Chong; US
LEN, Michael, J.; US
OSTERGAARD, Hans, P.; US
Agent:
MALLEY, Daniel, P.; US
Priority Data:
14/041,15530.09.2013US
Title (EN) HIGH POWER RF CIRCUIT
(FR) CIRCUIT RF HAUTE PUISSANCE
Abstract:
(EN) The present invention is directed to an RF device that includes a ceramic layer characterized by a ceramic layer dielectric constant and includes an RF circuit arrangement having a predetermined geometry and predetermined electrical characteristics. The ceramic layer dissipates thermal energy generated by the RF circuit via substantially the entire ceramic surface area. A first dielectric layer comprises a thermoplastic material and has a predetermined first thickness and a first dielectric constant. The predetermined electrical characteristics of the RF circuit arrangement are a function of the ceramic layer dielectric constant. A relative softness of the thermoplastic material is a function of the RF device operating temperature.
(FR) L'invention concerne un dispositif RF qui comprend une couche de céramique caractérisée par une constante diélectrique de couche de céramique et inclut un agencement de circuit RF ayant une géométrie prédéterminée et des caractéristiques électriques prédéterminées. La couche de céramique dissipe l'énergie thermique générée par le circuit RF via sensiblement la totalité de la superficie de céramique. Une première couche diélectrique comprend un matériau thermoplastique et a une première épaisseur prédéterminée et une première constante diélectrique. Les caractéristiques électriques prédéterminées de l'agencement de circuit RF dépendent de la constante diélectrique de la couche de céramique. Une souplesse relative du matériau thermoplastique dépend de la température de fonctionnement du dispositif RF.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)