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1. (WO2015047907) BASEBAND PROCESSING CIRCUITRY
Latest bibliographic data on file with the International Bureau   

Pub. No.: WO/2015/047907 International Application No.: PCT/US2014/056545
Publication Date: 02.04.2015 International Filing Date: 19.09.2014
IPC:
H03F 3/45 (2006.01) ,H03F 1/02 (2006.01) ,H03F 3/72 (2006.01) ,H03F 1/42 (2006.01) ,H03F 1/22 (2006.01) ,H03F 3/193 (2006.01) ,H03F 1/08 (2006.01)
H ELECTRICITY
03
BASIC ELECTRONIC CIRCUITRY
F
AMPLIFIERS
3
Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
45
Differential amplifiers
H ELECTRICITY
03
BASIC ELECTRONIC CIRCUITRY
F
AMPLIFIERS
1
Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
02
Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
H ELECTRICITY
03
BASIC ELECTRONIC CIRCUITRY
F
AMPLIFIERS
3
Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
72
Gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
H ELECTRICITY
03
BASIC ELECTRONIC CIRCUITRY
F
AMPLIFIERS
1
Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
42
Modifications of amplifiers to extend the bandwidth
H ELECTRICITY
03
BASIC ELECTRONIC CIRCUITRY
F
AMPLIFIERS
1
Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
08
Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
22
by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively
H ELECTRICITY
03
BASIC ELECTRONIC CIRCUITRY
F
AMPLIFIERS
3
Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
189
High-frequency amplifiers, e.g. radio frequency amplifiers
19
with semiconductor devices only
193
with field-effect devices
H ELECTRICITY
03
BASIC ELECTRONIC CIRCUITRY
F
AMPLIFIERS
1
Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
08
Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
Applicants:
QUALCOMM INCORPORATED [US/US]; ATTN: International IP Administration 5775 Morehouse Drive San Diego, California 92121-1714, US
Inventors:
CHANG, Li-Chung; US
GUPTA, Bindu; US
GATHMAN, Timothy Donald; US
CHAMAS, Ibrahim Ramez; US
Agent:
TOLER, JEFFREY G.; 8500 Bluffstone Cove, Suite A201 Austin, Texas 78759, US
Priority Data:
14/037,11625.09.2013US
Title (EN) BASEBAND PROCESSING CIRCUITRY
(FR) CIRCUIT DE TRAITEMENT DE BANDE DE BASE
Abstract:
(EN) Techniques for designing baseband processing circuitry for radio IC's. In an aspect, techniques for differential-to-single-ended conversion in a baseband portion of the IC are disclosed to reduce the pin count and package size for RF IC's. In another aspect, the converter includes selectable narrowband and wideband amplifiers, wherein the wideband amplifiers may be implemented using transistor devices having smaller area than corresponding transistor devices of narrowband amplifiers. Further techniques for bypassing one or more elements, and for implementing a low-pass filter of the converter using an R-C filter network, are described.
(FR) L'invention concerne des techniques permettant de concevoir un circuit de traitement de bande de base pour des CI radio. Un aspect de l'invention concerne des techniques permettant une conversion différentiel-asymétrique dans une partie de la bande de base du CI afin de réduire le nombre de broches et la taille de boîtier des CI RF. Selon un autre aspect, le convertisseur comprend des amplificateurs à bande étroite et à bande large sélectionnables, les amplificateurs à bande large pouvant être mis en œuvre au moyen de dispositifs à transistors ayant une surface inférieure aux dispositifs à transistors correspondants des amplificateurs à bande étroite. L'invention concerne également d'autres techniques permettant de contourner un ou plusieurs éléments, et de mettre en œuvre un filtre passe-bas du convertisseur au moyen d'un réseau de filtre R-C.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)