Search International and National Patent Collections

1. (WO2015047828) A TECHNIQUE FOR CONTROLLING TEMPERATURE UNIFORMITY IN CRYSTAL GROWTH APPARATUS

Pub. No.:    WO/2015/047828    International Application No.:    PCT/US2014/056080
Publication Date: Fri Apr 03 01:59:59 CEST 2015 International Filing Date: Thu Sep 18 01:59:59 CEST 2014
IPC: C30B 15/12
C30B 15/00
Applicants: GTAT CORPORATION
Inventors: SCHMID, Frederick
RIOPEL, Cody
ZHANG, Hui
Title: A TECHNIQUE FOR CONTROLLING TEMPERATURE UNIFORMITY IN CRYSTAL GROWTH APPARATUS
Abstract:
A sapphire crystal growth apparatus is provided that includes a chamber, a hot zone and a muffle. More specifically, the hot zone is disposed within the chamber and includes at least one heating system, at least one heat removal system, and a crucible containing feedstock. Additionally, a muffle that surrounds at least two sides of the crucible is also provided to ensure uniform temperature distribution through the feedstock during crystal growth to allow the crystalline material to be grown with a square or rectangular shaped cross section.