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1. (WO2015047671) VERTICAL TRANSISTOR DEVICES FOR EMBEDDED MEMORY AND LOGIC TECHNOLOGIES

Pub. No.:    WO/2015/047671    International Application No.:    PCT/US2014/053720
Publication Date: Fri Apr 03 01:59:59 CEST 2015 International Filing Date: Wed Sep 03 01:59:59 CEST 2014
IPC: H01L 29/786
H01L 29/788
H01L 21/336
H01L 21/20
Applicants: INTEL CORPORATION
Inventors: DOYLE, Brian S.
SHAH, Uday
KOTLYAR, Roza
KUO, Charles C.
Title: VERTICAL TRANSISTOR DEVICES FOR EMBEDDED MEMORY AND LOGIC TECHNOLOGIES
Abstract:
Vertical transistor devices are described. For example, in one embodiment, a vertical transistor device includes an epitaxial source semiconductor region disposed on a substrate, an epitaxial channel semiconductor region disposed on the source semiconductor region, an epitaxial drain semiconductor region disposed on the channel semiconductor region, and a gate electrode region surrounding sidewalls of the semiconductor channel region. A composition of at least one of the semiconductor regions varies along a longitudinal axis that is perpendicular with respect to a surface of the substrate.