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1. (WO2015047316) COMPOSITE HIGH-K METAL GATE STACK FOR ENHANCEMENT MODE GAN SEMICONDUCTOR DEVICES

Pub. No.:    WO/2015/047316    International Application No.:    PCT/US2013/062314
Publication Date: Fri Apr 03 01:59:59 CEST 2015 International Filing Date: Sat Sep 28 01:59:59 CEST 2013
IPC: H01L 29/78
H01L 21/336
Applicants: INTEL CORPORATION
Inventors: THEN, Han Wui
DASGUPTA, Sansaptak
RADOSAVLJEVIC, Marko
CHAU, Robert S.
SUNG, Seung Hoon
GARDNER, Sanaz K.
Title: COMPOSITE HIGH-K METAL GATE STACK FOR ENHANCEMENT MODE GAN SEMICONDUCTOR DEVICES
Abstract:
Enhancement mode gallium nitride (GaN) semiconductor devices having a composite high-k metal gate stack and methods of fabricating such devices are described. In an example, a semiconductor device includes a gallium nitride (GaN) channel region disposed above a substrate. A gate stack is disposed on the GaN channel region. The gate stack includes a composite gate dielectric layer disposed directly between the GaN channel region and a gate electrode. The composite gate dielectric layer includes a high band gap Group III-N layer, a first high-K dielectric oxide layer, and a second high-K dielectric oxide layer having a higher dielectric constant than the first high-K dielectric oxide layer. Source/drain regions are disposed on either side of the GaN channel region.