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1. (WO2015047255) SACRIFICIAL MATERIAL FOR STRIPPING MASKING LAYERS

Pub. No.:    WO/2015/047255    International Application No.:    PCT/US2013/061735
Publication Date: Fri Apr 03 01:59:59 CEST 2015 International Filing Date: Thu Sep 26 01:59:59 CEST 2013
IPC: H01L 21/312
H01L 21/027
Applicants: INTEL CORPORATION
SUNDARARAJAN, Shakuntala
RAHHAL-ORABI, Nadia
GULER, Leonard
HARPER, Michael
TROEGER, Ralph, T.
Inventors: SUNDARARAJAN, Shakuntala
RAHHAL-ORABI, Nadia
GULER, Leonard
HARPER, Michael
TROEGER, Ralph, T.
Title: SACRIFICIAL MATERIAL FOR STRIPPING MASKING LAYERS
Abstract:
Techniques and structures for protecting etched features during etch mask removal. In embodiments, a mask is patterned and a substrate layer etched to transfer the pattern. Subsequent to etching the substrate layer, features patterned into the substrate are covered with a sacrificial material backfilling the etch mask. At least a top portion of the mask is removed with the substrate features protected by the sacrificial material. The sacrificial material and any remaining portion of the mask are then removed. In further embodiments, a gate contact opening etched into a substrate layer is protected with a sacrificial material having the same composition as a first material layer of a multi-layered etch mask. A second material layer of the etch mask having a similar composition as the substrate layer is removed before subsequently removing the sacrificial material concurrently with the first mask material layer.