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1. (WO2015047253) ISOLATION WELL DOPING WITH SOLID-STATE DIFFUSION SOURCES FOR FINFET ARCHITECTURES

Pub. No.:    WO/2015/047253    International Application No.:    PCT/US2013/061732
Publication Date: Fri Apr 03 01:59:59 CEST 2015 International Filing Date: Thu Sep 26 01:59:59 CEST 2013
IPC: H01L 21/336
H01L 29/78
Applicants: INTEL CORPORATION
HAFEZ, Walid, M.
JAN, Chia-Hong
YEH, Jeng-Ya, D.
CHANG, Hsu-Yu
DIAS, Neville
MUNASINGHE, Chanaka
Inventors: HAFEZ, Walid, M.
JAN, Chia-Hong
YEH, Jeng-Ya, D.
CHANG, Hsu-Yu
DIAS, Neville
MUNASINGHE, Chanaka
Title: ISOLATION WELL DOPING WITH SOLID-STATE DIFFUSION SOURCES FOR FINFET ARCHITECTURES
Abstract:
An impurity source film is formed along a portion of a non-planar semiconductor fin structure. The impurity source film may serve as source of an impurity that becomes electrically active subsequent to diffusing from the source film into the semiconductor fin. In one embodiment, an impurity source film is disposed adjacent to a sidewall surface of a portion of a sub-fin region disposed between an active region of the fin and the substrate and is more proximate to the substrate than to the active area. In further embodiments, the impurity source film may provide a source of dopant that renders the sub-fin region complementarily doped relative to a region of the substrate forming a P/N junction that is at least part of an isolation structure electrically isolating the active fin region from a region of the substrate.