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1. (WO2015047233) METHODS OF FORMING BURIED VERTICAL CAPACITORS AND STRUCTURES FORMED THEREBY

Pub. No.:    WO/2015/047233    International Application No.:    PCT/US2013/061538
Publication Date: Fri Apr 03 01:59:59 CEST 2015 International Filing Date: Thu Sep 26 01:59:59 CEST 2013
IPC: H01L 21/20
Applicants: INTEL CORPORATION
BASKARAN, Rajashree
JUN, Kimin
MORROW, Patrick
Inventors: BASKARAN, Rajashree
JUN, Kimin
MORROW, Patrick
Title: METHODS OF FORMING BURIED VERTICAL CAPACITORS AND STRUCTURES FORMED THEREBY
Abstract:
Methods of forming passive elements under a device layer are described. Those methods and structures may include forming at least one passive structure, such as a capacitor and a resistor structure, in a substrate, wherein the passive structures are vertically disposed within the substrate. An insulator layer is formed on a top surface of the passive structure, a device layer is formed on the insulator layer, and a contact is formed to couple a device disposed in the device layer to the at least one passive structure.