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1. (WO2015045878) UNDERFILL MATERIAL AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING SAID UNDERFILL MATERIAL
Latest bibliographic data on file with the International Bureau   

Pub. No.: WO/2015/045878 International Application No.: PCT/JP2014/073966
Publication Date: 02.04.2015 International Filing Date: 10.09.2014
Chapter 2 Demand Filed: 28.01.2015
IPC:
H01L 21/60 (2006.01) ,H01L 23/29 (2006.01) ,H01L 23/31 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
50
Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/06-H01L21/326162
60
Attaching leads or other conductive members, to be used for carrying current to or from the device in operation
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23
Details of semiconductor or other solid state devices
28
Encapsulation, e.g. encapsulating layers, coatings
29
characterised by the material
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23
Details of semiconductor or other solid state devices
28
Encapsulation, e.g. encapsulating layers, coatings
31
characterised by the arrangement
Applicants:
デクセリアルズ株式会社 DEXERIALS CORPORATION [JP/JP]; 東京都品川区大崎1丁目11番2号 ゲートシティ大崎イーストタワー8階 Gate City Osaki, East Tower 8F, 1-11-2, Osaki, Shinagawa-ku, Tokyo 1410032, JP
Inventors:
森山 浩伸 MORIYAMA, Hironobu; JP
Agent:
野口 信博 NOGUCHI, Nobuhiro; JP
Priority Data:
2013-20161227.09.2013JP
Title (EN) UNDERFILL MATERIAL AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING SAID UNDERFILL MATERIAL
(FR) MATÉRIAU DE REMPLISSAGE ET PROCÉDÉ DE PRODUCTION DE DISPOSITIF À SEMI-CONDUCTEURS À L'AIDE DUDIT MATÉRIAU DE REMPLISSAGE
(JA) アンダーフィル材、及びこれを用いた半導体装置の製造方法
Abstract:
(EN) This invention provides: an underfill material that prevents excessive solder collapse and allows good soldering performance; and a method for manufacturing a semiconductor device using said underfill material. Said underfill material (20) contains a film-forming resin, an epoxy, an acid anhydride, an acrylic resin, and an organic peroxide. The film-forming resin contains an acrylic-rubber polymer. Including an acrylic-rubber polymer as a film-forming resin makes it possible to prevent excessive solder collapse and allow good soldering performance.
(FR) La présente invention pourvoit à : un matériau de remplissage qui évite l'affaissement excessif de la soudure et permet une performance de soudage satisfaisante; et un procédé de production d'un dispositif à semi-conducteurs à l'aide dudit matériau de remplissage. Ledit matériau de remplissage (20) contient une résine de formation de film, un époxyde, un anhydride d'acide, une résine acrylique, et un peroxyde organique. La résine de formation de film contient un polymère de caoutchouc acrylique. L'utilisation d'un polymère de caoutchouc acrylique en tant que résine de formation de film permet d'éviter l'affaissement excessif de la soudure et une performance de soudage satisfaisante.
(JA)  ハンダの潰れすぎを抑え、良好なハンダ接合性を実現するアンダーフィル材、及びこれを用いた半導体装置の製造方法を提供する。膜形成樹脂と、エポキシ樹脂と、酸無水物と、アクリル樹脂と、有機過酸化物とを含有し、膜形成樹脂が、アクリルゴムポリマーを含むアンダーフィル材(20)を用いる。膜形成樹脂としてアクリルゴムポリマーを含むため、ハンダの潰れすぎを抑え、良好なハンダ接合性を実現することができる。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)