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1. (WO2015045754) HIGHLY PURE In AND MANUFACTURING METHOD THEREFOR
Latest bibliographic data on file with the International Bureau   

Pub. No.: WO/2015/045754 International Application No.: PCT/JP2014/073027
Publication Date: 02.04.2015 International Filing Date: 02.09.2014
Chapter 2 Demand Filed: 20.01.2015
IPC:
C25C 1/22 (2006.01) ,C22B 58/00 (2006.01) ,C22C 28/00 (2006.01) ,C25C 7/04 (2006.01)
C CHEMISTRY; METALLURGY
25
ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
C
PROCESSES FOR THE ELECTROLYTIC PRODUCTION, RECOVERY OR REFINING OF METALS; APPARATUS THEREFOR
1
Electrolytic production, recovery or refining of metals by electrolysis of solutions
22
of metals not provided for in groups C25C1/02-C25C1/2089
C CHEMISTRY; METALLURGY
22
METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
B
PRODUCTION OR REFINING OF METALS; PRETREATMENT OF RAW MATERIALS
58
Obtaining gallium or indium
C CHEMISTRY; METALLURGY
22
METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
C
ALLOYS
28
Alloys based on a metal not provided for in groups C22C5/-C22C27/103
C CHEMISTRY; METALLURGY
25
ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
C
PROCESSES FOR THE ELECTROLYTIC PRODUCTION, RECOVERY OR REFINING OF METALS; APPARATUS THEREFOR
7
Constructional parts, or assemblies thereof, of cells; Servicing or operating of cells
04
Diaphragms; Spacing elements
Applicants:
JX金属株式会社 JX NIPPON MINING & METALS CORPORATION [JP/JP]; 東京都千代田区大手町一丁目1番2号 1-2, Otemachi 1-chome, Chiyoda-ku, Tokyo 1008164, JP
Inventors:
日野 英治 HINO Eiji; JP
大部 裕史 OBU Hirohumi; JP
Agent:
小越 勇 OGOSHI Isamu; JP
Priority Data:
2013-20126427.09.2013JP
Title (EN) HIGHLY PURE In AND MANUFACTURING METHOD THEREFOR
(FR) INDIUM TRÈS PUR ET SON PROCÉDÉ DE FABRICATION
(JA) 高純度In及びその製造方法
Abstract:
(EN) Highly pure In having a purity of 7N (99.99999%) or more with not more than 0.05 ppm Pb, not more than 0.005 ppm Zn, and not more than 0.02 ppm S. A method for manufacturing highly pure In characterized in that when electrolytically purifying 5N (99.999%) In, SrCO3 is added to the electrolytic solution to reduce Pb, Zn and S and increase the purity to 7N (99.99999%) or more. There is a possibility that the demand for LED In such as InGaN or AlInGaP will increase and it will be necessary to manufacture In inexpensively and in large quantities in the future. The present invention provides a technology that is capable of meeting such a need.
(FR) L'invention concerne de l'indium (In) très pur présentant une pureté égale ou supérieure à 7N (99,99999 %) et une quantité de plomb (Pb) inférieure ou égale à 0,05 ppm, une quantité de zinc (Zn) inférieure ou égale à 0,005 ppm et une quantité de soufre (S) inférieure ou égale à 0,02 ppm. Un procédé permettant de fabriquer de l'indium (In) très pur est caractérisé en ce que, lors de la purification par voie électrolytique de l'indium de pureté 5N (99,999 %), du SrCO3 est ajouté à la solution électrolytique afin de réduire la quantité de plomb (Pb), de zinc (Zn) et de soufre (S) et d'augmenter la pureté, la passant à une pureté égale ou supérieure à 7N (99,99999 %). Il existe une possibilité que la demande en indium pour les diodes électroluminescentes, tels que le nitrure de gallium-indium (InGaN) ou le phosphore de gallium-indium-aluminium (AlInGaP) augmentera et il sera nécessaire de fabriquer dans le futur à bas prix et en grandes quantités de l'indium. La présente invention concerne une technologie qui peut satisfaire un tel besoin.
(JA) Pb:0.05ppm以下、Zn:0.005ppm以下、S:0.02ppm以下であり、7N(99.99999%)以上の純度を有する高純度In。5N(99.999%)のInを電解精製する際に、電解液にSrCOを添加してPb、Zn、Sを低減させ、7N(99.99999%)以上の純度とすることを特徴とする高純度Inの製造方法。InGaN、AlInGaPなどのLED用のIn需要が伸びていくという可能性があり、今後大量にかつ安価に製造することが要求されるが、本願発明はこれに対応できる技術を提供する。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)