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1. (WO2015045654) SILICON CARBIDE SEMICONDUCTOR SUBSTRATE AND METHOD FOR PRODUCING SAME

Pub. No.:    WO/2015/045654    International Application No.:    PCT/JP2014/071166
Publication Date: Fri Apr 03 01:59:59 CEST 2015 International Filing Date: Tue Aug 12 01:59:59 CEST 2014
IPC: C30B 29/36
C23C 16/42
H01L 21/02
H01L 21/205
Applicants: SUMITOMO ELECTRIC INDUSTRIES, LTD.
住友電気工業株式会社
Inventors: TANAKA, So
田中 聡
OKITA, Kyoko
沖田 恭子
NISHIGUCHI, Taro
西口 太郎
KUBOTA, Ryosuke
久保田 良輔
KANBARA, Kenji
神原 健司
Title: SILICON CARBIDE SEMICONDUCTOR SUBSTRATE AND METHOD FOR PRODUCING SAME
Abstract:
A silicon carbide semiconductor substrate (10) is provided with a first principal surface (10a) and a second principal surface (10b) opposite the first principal surface (10a). The maximum diameter of the first principal surface (10a) is greater than 100mm, and the thickness of the silicon carbide semiconductor substrate (10) is 700μm or less. The dislocation density is 500/mm2 or less in an arbitrary region having a surface area of 1mm2 and located in a region (OR2) within 5mm from the outer-circumferential edge section (OR) of the first principal surface (10a) toward the center (O) of the first principal surface (10a). As a result, the present invention provides a silicon carbide semiconductor substrate capable of minimizing cracking.