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1. (WO2015045653) SILICON CARBIDE SEMICONDUCTOR DEVICE MANUFACTURING METHOD

Pub. No.:    WO/2015/045653    International Application No.:    PCT/JP2014/071165
Publication Date: Fri Apr 03 01:59:59 CEST 2015 International Filing Date: Tue Aug 12 01:59:59 CEST 2014
IPC: H01L 21/265
H01L 21/336
H01L 29/06
H01L 29/12
H01L 29/78
Applicants: SUMITOMO ELECTRIC INDUSTRIES, LTD.
住友電気工業株式会社
Inventors: MASUDA, Takeyoshi
増田 健良
Title: SILICON CARBIDE SEMICONDUCTOR DEVICE MANUFACTURING METHOD
Abstract:
This SiC semiconductor device manufacturing method is provided with: a step for forming an impurity region (a body region (13), a source region (14), and a contact region (15)) in a SiC layer (10); a step for forming a first carbon layer (20) on surfaces (a main surface, a side wall surface (SW), and a bottom surface (BW)) of the SiC layer (10) by selectively removing silicon from the surfaces, said SiC layer having the impurity region formed therein; a step for forming a second carbon layer (21) on the first carbon layer (20); and a step for heating the SiC layer (10) having the first carbon layer (20) and the second carbon layer (21) formed thereon.