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1. (WO2015045652) SILICON CARBIDE SEMICONDUCTOR SUBSTRATE, AND SILICON CARBIDE SEMICONDUCTOR DEVICE PROVIDED WITH SILICON CARBIDE SEMICONDUCTOR SUBSTRATE

Pub. No.:    WO/2015/045652    International Application No.:    PCT/JP2014/071161
Publication Date: Fri Apr 03 01:59:59 CEST 2015 International Filing Date: Tue Aug 12 01:59:59 CEST 2014
IPC: C30B 29/36
H01L 29/12
H01L 29/78
Applicants: SUMITOMO ELECTRIC INDUSTRIES, LTD.
住友電気工業株式会社
Inventors: TANAKA, So
田中 聡
NISHIGUCHI, Taro
西口 太郎
MIYAZAKI, Tomihito
宮崎 富仁
Title: SILICON CARBIDE SEMICONDUCTOR SUBSTRATE, AND SILICON CARBIDE SEMICONDUCTOR DEVICE PROVIDED WITH SILICON CARBIDE SEMICONDUCTOR SUBSTRATE
Abstract:
A silicon carbide semiconductor substrate (10) is provided with a first principal surface (10a) and a second principal surface (10b) opposite the first principal surface (10a), and contains nitrogen as an impurity. The quotient obtained by dividing the thickness (d) of the silicon carbide semiconductor substrate (10) by the maximum diameter (2R) of the first principal surface (10a) is 4×10-3 or less, and the concentration of nitrogen is 1×1018 cm-3 or more. As a result, the present invention provides a silicon carbide semiconductor substrate capable of reducing buckling, and a silicon carbide semiconductor device provided with the silicon carbide semiconductor substrate.