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1. (WO2015045626) SILICON CARBIDE SEMICONDUCTOR DEVICE AND PRODUCTION METHOD THEREFOR

Pub. No.:    WO/2015/045626    International Application No.:    PCT/JP2014/070557
Publication Date: Fri Apr 03 01:59:59 CEST 2015 International Filing Date: Wed Aug 06 01:59:59 CEST 2014
IPC: H01L 29/78
H01L 21/28
H01L 21/336
H01L 29/12
H01L 29/423
H01L 29/49
Applicants: SUMITOMO ELECTRIC INDUSTRIES, LTD.
住友電気工業株式会社
Inventors: HIYOSHI, Toru
日吉 透
HORII, Taku
堀井 拓
MASUDA, Takeyoshi
増田 健良
YAMADA, Shunsuke
山田 俊介
Title: SILICON CARBIDE SEMICONDUCTOR DEVICE AND PRODUCTION METHOD THEREFOR
Abstract:
A silicon carbide semiconductor device is provided with: a silicon carbide semiconductor layer (100); a gate insulator film (91) that is formed on the silicon carbide semiconductor layer (100); and a gate electrode (92) that is provided on the gate insulator film (91). The gate electrode (92) comprises a polysilicon layer (92a) on at least the interface side with the gate insulator film (91). In addition, the gate insulator film (91) comprises an oxide film (91a) that is derived from the polysilicon layer (92a) on the interface of the gate insulator film (91) and the polysilicon layer (92a) of the gate electrode (92).