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1. (WO2015045592) SEMICONDUCTOR DEVICE AND DIELECTRIC FILM

Pub. No.:    WO/2015/045592    International Application No.:    PCT/JP2014/069368
Publication Date: Fri Apr 03 01:59:59 CEST 2015 International Filing Date: Wed Jul 23 01:59:59 CEST 2014
IPC: H01L 21/8246
C01G 27/02
H01L 27/105
Applicants: KABUSHIKI KAISHA TOSHIBA
株式会社 東芝
Inventors: INO, Tsunehiro
井野 恒洋
TAKAISHI, Riichiro
高石 理一郎
KATO, Koichi
加藤 弘一
NAKASAKI, Yasushi
中崎 靖
ISHIHARA, Takamitsu
石原 貴光
MATSUSHITA, Daisuke
松下 大介
Title: SEMICONDUCTOR DEVICE AND DIELECTRIC FILM
Abstract:
The semiconductor device of the embodiment is provided with a first conducting layer, a second conducting layer, and, between the first conducting layer and the second conducting layer, a dielectric film containing a fluorite crystal, wherein positive ion sites contain at least any one of Hf (hafnium) or Zr (zirconium) and negative ion sites contain O (oxygen), and, a, b and c fulfill a predetermined relationship, when, among the three axes of the primitive unit cell of the crystal, the axis in the direction with no inversion symmetry is the c-axis, the layering direction of two species of atom planes formed by negative ions in different arrangement positions is the a-axis, and the remainder is the b-axis, a is the axis length of the a-axis of the primitive unit cell, b is the axis length of the b-axis, and c is the axis length of the c-axis, p is a parameter, and x, y, z, u, v and w are values represented using the parameter p.