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1. (WO2015045164) SUBSTRATE PROCESSING DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

Pub. No.:    WO/2015/045164    International Application No.:    PCT/JP2013/076572
Publication Date: Fri Apr 03 01:59:59 CEST 2015 International Filing Date: Tue Oct 01 01:59:59 CEST 2013
IPC: H01L 21/31
C23C 16/455
C23C 16/50
H05H 1/46
Applicants: HITACHI KOKUSAI ELECTRIC INC.
株式会社日立国際電気
Inventors: HIROCHI, Yukitomo
廣地 志有
TOYODA, Kazuyuki
豊田 一行
MORIMITSU, Kazuhiro
盛満 和広
SATO, Taketoshi
佐藤 武敏
YAMAMOTO, Tetsuo
山本 哲夫
Title: SUBSTRATE PROCESSING DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
Abstract:
The present invention is a substrate processing device which alternately supplies a first processing gas and a plasmatized second processing gas to a processing container so as to process a substrate, and is provided with: a first gas supply system which supplies a first processing gas; a second gas supply system which supplies a second processing gas; a plasma unit which is placed upstream of a processing container, and which plasmatizes at least the second processing gas; and a control unit which controls the first gas supply system and the second gas supply system so that the first processing gas and the second processing gas are supplied alternately, and which controls the plasma unit so as to perform application of power necessary for plasmatization of the second processing gas from prior to starting of the supply of the second processing gas.