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1. (WO2015045164) SUBSTRATE PROCESSING DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
Latest bibliographic data on file with the International Bureau   

Pub. No.: WO/2015/045164 International Application No.: PCT/JP2013/076572
Publication Date: 02.04.2015 International Filing Date: 30.09.2013
IPC:
H01L 21/31 (2006.01) ,C23C 16/455 (2006.01) ,C23C 16/50 (2006.01) ,H05H 1/46 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
31
to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers; Selection of materials for these layers
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16
Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
44
characterised by the method of coating
455
characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16
Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
44
characterised by the method of coating
50
using electric discharges
H ELECTRICITY
05
ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
H
PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY- CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
1
Generating plasma; Handling plasma
24
Generating plasma
46
using applied electromagnetic fields, e.g. high frequency or microwave energy
Applicants:
株式会社日立国際電気 HITACHI KOKUSAI ELECTRIC INC. [JP/JP]; 東京都千代田区外神田四丁目14番1号 14-1, Sotokanda 4-chome, Chiyoda-ku, Tokyo 1018980, JP
Inventors:
廣地 志有 HIROCHI, Yukitomo; JP
豊田 一行 TOYODA, Kazuyuki; JP
盛満 和広 MORIMITSU, Kazuhiro; JP
佐藤 武敏 SATO, Taketoshi; JP
山本 哲夫 YAMAMOTO, Tetsuo; JP
Priority Data:
Title (EN) SUBSTRATE PROCESSING DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
(FR) DISPOSITIF DE TRAITEMENT DE SUBSTRAT ET PROCÉDÉ DE FABRICATION DE DISPOSITIF À SEMI-CONDUCTEURS
(JA) 基板処理装置および半導体装置の製造方法
Abstract:
(EN) The present invention is a substrate processing device which alternately supplies a first processing gas and a plasmatized second processing gas to a processing container so as to process a substrate, and is provided with: a first gas supply system which supplies a first processing gas; a second gas supply system which supplies a second processing gas; a plasma unit which is placed upstream of a processing container, and which plasmatizes at least the second processing gas; and a control unit which controls the first gas supply system and the second gas supply system so that the first processing gas and the second processing gas are supplied alternately, and which controls the plasma unit so as to perform application of power necessary for plasmatization of the second processing gas from prior to starting of the supply of the second processing gas.
(FR) La présente invention porte sur un dispositif de traitement de substrat qui fournit de manière alternée un premier gaz de traitement et un second gaz de traitement transformé en plasma à un conteneur de traitement afin de traiter un substrat, et comporte : un premier système de fourniture de gaz qui fournit un premier gaz de traitement ; un second système de fourniture de gaz qui fournit un second gaz de traitement ; une unité de plasma qui est placée en amont d’un conteneur de traitement, et qui transforme en plasma au moins le second gaz de traitement ; et une unité de commande qui commande le premier système de fourniture de gaz et le second système de fourniture de gaz de telle sorte que le premier gaz de traitement et le second gaz de traitement sont fournis de manière alternée, et qui commande l’unité de plasma afin de réaliser une application de puissance nécessaire pour transformer en plasma le second gaz de traitement avant le début de la fourniture du second gaz de traitement.
(JA) 第1の処理ガスと、プラズマ化された第2の処理ガスとを交互に処理容器に供給して基板を処理する基板処理装置であって、前記第1の処理ガスを供給する第1のガス供給系と、前記第2の処理ガスを供給する第2のガス供給系と、前記処理容器の上流に配置され、少なくとも前記第2の処理ガスをプラズマ化するプラズマユニットと、前記第1の処理ガスと前記第2の処理ガスとが交互に供給されるように前記第1のガス供給系と前記第2のガス供給系を制御すると共に、前記第2の処理ガスの供給が開始される前から前記第2の処理ガスのプラズマ化に必要な電力印加を実行するように前記プラズマユニットを制御する制御部と、を備える。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)