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|1. (WO2015045164) SUBSTRATE PROCESSING DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE|
|Applicants:||HITACHI KOKUSAI ELECTRIC INC.
|Title:||SUBSTRATE PROCESSING DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE|
The present invention is a substrate processing device which alternately supplies a first processing gas and a plasmatized second processing gas to a processing container so as to process a substrate, and is provided with: a first gas supply system which supplies a first processing gas; a second gas supply system which supplies a second processing gas; a plasma unit which is placed upstream of a processing container, and which plasmatizes at least the second processing gas; and a control unit which controls the first gas supply system and the second gas supply system so that the first processing gas and the second processing gas are supplied alternately, and which controls the plasma unit so as to perform application of power necessary for plasmatization of the second processing gas from prior to starting of the supply of the second processing gas.