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1. (WO2015045163) METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING DEVICE, SUBSTRATE PROCESSING SYSTEM, AND STORAGE MEDIUM
Latest bibliographic data on file with the International Bureau   

Pub. No.: WO/2015/045163 International Application No.: PCT/JP2013/076571
Publication Date: 02.04.2015 International Filing Date: 30.09.2013
IPC:
H01L 21/316 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
31
to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers; Selection of materials for these layers
314
Inorganic layers
316
composed of oxides or glassy oxides or oxide-based glass
Applicants:
株式会社日立国際電気 HITACHI KOKUSAI ELECTRIC INC. [JP/JP]; 東京都千代田区外神田4-14-1 4-14-1, Sotokanda, Chiyoda-ku, Tokyo 1018980, JP
Inventors:
野田 孝暁 NODA, Takaaki; JP
野原 慎吾 NOHARA, Shingo; JP
島本 聡 SHIMAMOTO, Satoshi; JP
芦原 洋司 ASHIHARA, Hiroshi; JP
花島 建夫 HANASHIMA, Takeo; JP
▲ひろせ▼ 義朗 HIROSE, Yoshiro; JP
鎌倉 司 KAMAKURA, Tsukasa; JP
Priority Data:
Title (EN) METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING DEVICE, SUBSTRATE PROCESSING SYSTEM, AND STORAGE MEDIUM
(FR) PROCÉDÉ DE FABRICATION D'UN DISPOSITIF SEMICONDUCTEUR, DISPOSITIF DE TRAITEMENT DE SUBSTRAT, SYSTÈME DE TRAITEMENT DE SUBSTRAT ET SUPPORT D'ENREGISTREMENT
(JA) 半導体装置の製造方法、基板処理装置、基板処理システム及び記録媒体
Abstract:
(EN)  The present invention has: a step for forming on a substrate a thin film containing a prescribed element, oxygen, and carbon by performing a prescribed number of cycles including the steps of: supplying to the substrate a raw material gas containing the prescribed element, carbon, and a halogen element, the prescribed element and the carbon being chemically bonded; supplying an oxide gas to the substrate; and supplying a catalyst gas to the substrate; a step for removing a first impurity from the thin film by heat-treating the thin film at a first temperature higher than the temperature of the substrate during the step for forming the thin film; and a step for removing a second impurity differing from the first impurity from the thin film, which has undergone heat-treatment at the first temperature, the second impurity being removed by heat-treating the thin film at a second temperature equal to or greater than the first temperature.
(FR)  La présente invention concerne un procédé comprenant : une étape de formation sur un substrat d'un film mince contenant un élément prescrit, de l'oxygène, et du carbone en exécutant un nombre prescrit de cycles incluant les étapes suivantes : fourniture au substrat d'une matière première gazeuse contenant l'élément prescrit, du carbone et un élément halogéné, l'élément prescrit et le carbone étant chimiquement liés ; fourniture d'un gaz d'oxyde au substrat ; et fourniture d'un gaz catalyseur au substrat ; une étape d'enlèvement d'une première impureté du film mince par traitement thermique du film mince à une première température supérieure à la température du substrat pendant l'étape de formation du film mince ; et une étape d'enlèvement d'une deuxième impureté différente de la première impureté du film mince, qui a été soumis à un traitement thermique à la première température, la deuxième impureté étant enlevée par traitement thermique du film mince à une deuxième température égale ou supérieure à la première température.
(JA)  基板に対して所定元素、炭素およびハロゲン元素を含み、所定元素と炭素との化学結合を有する原料ガスを供給する工程と、基板に対して酸化ガスを供給する工程と、基板に対して触媒ガスを供給する工程と、を含むサイクルを所定回数行うことにより、基板上に、所定元素、酸素および炭素を含む薄膜を形成する工程と、薄膜を形成する工程における基板の温度よりも高い第1の温度で薄膜を熱処理することにより、薄膜中から第1の不純物を除去する工程と、第1の温度以上の第2の温度で薄膜を熱処理することにより、第1の温度で熱処理した後の薄膜中から、第1の不純物とは異なる第2の不純物を除去する工程と、を有する。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IS, JP, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LT, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)