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1. (WO2015045137) SUBSTRATE PROCESSING DEVICE, SUBSTRATE PROCESSING METHOD, AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE

Pub. No.:    WO/2015/045137    International Application No.:    PCT/JP2013/076488
Publication Date: Fri Apr 03 01:59:59 CEST 2015 International Filing Date: Tue Oct 01 01:59:59 CEST 2013
IPC: H01L 21/31
H01L 21/316
Applicants: HITACHI KOKUSAI ELECTRIC INC.
株式会社日立国際電気
Inventors: FUKUDA Masanao
福田 正直
URUSHIHARA Mika
うるし原 美香
SASAKI Takafumi
佐々木 隆史
Title: SUBSTRATE PROCESSING DEVICE, SUBSTRATE PROCESSING METHOD, AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE
Abstract:
This substrate processing device is provided with: a processing chamber for storing and processing a plurality of substrates arranged with an interval interposed therebetween; a first nozzle for supplying a starting-material gas to the interior of the processing chamber; a second nozzle for supplying an oxidizing species generated by reacting an oxygen-containing gas and a hydrogen-containing gas with one another to the interior of the processing chamber, and positioned inside the processing chamber so as to extend in the direction in which the substrates are arranged. Therein, the lateral surface of the second nozzle has one or more gas supply holes provided only in a center section thereof which corresponds to a substrate positioned in the center section of the plurality of substrates.