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1. (WO2015045089) SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD FOR SAME

Pub. No.:    WO/2015/045089    International Application No.:    PCT/JP2013/076227
Publication Date: Fri Apr 03 01:59:59 CEST 2015 International Filing Date: Sat Sep 28 01:59:59 CEST 2013
IPC: H01L 23/12
H05K 3/28
Applicants: RENESAS ELECTRONICS CORPORATION
ルネサスエレクトロニクス株式会社
Inventors: SHIMOTE, Yoshikazu
下手 義和
BABA, Shinji
馬場 伸治
IWASAKI, Toshihiro
岩崎 俊寛
NAKAGAWA, Kazuyuki
中川 和之
Title: SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD FOR SAME
Abstract:
In a semiconductor device (SP1) according to one embodiment, between a substrate layer (2CR) of a wiring board (2) and a semiconductor chip (3), a solder resist film (first insulating layer (SR1)) which adheres closely to the substrate layer, and a resin body (second insulating layer (4)) which adheres closely to the solder resist film and the semiconductor chip, are stacked. Furthermore, the linear expansion coefficient of the solder resist film is greater than or equal to the linear expansion coefficient of the substrate layer, the linear expansion coefficient of the solder resist film is less than or equal to the linear expansion coefficient of the resin body, and the linear expansion coefficient of the substrate layer is less than the linear expansion coefficient of the resin body. According to the configuration, it is possible to suppress damage to the semiconductor device caused by a temperature cycle load, and to improve reliability.