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1. (WO2015044975) ETCHING METHOD

Pub. No.:    WO/2015/044975    International Application No.:    PCT/JP2013/005678
Publication Date: Fri Apr 03 01:59:59 CEST 2015 International Filing Date: Thu Sep 26 01:59:59 CEST 2013
IPC: H01L 21/306
Applicants: TOHOKU UNIVERSITY
国立大学法人東北大学
SAKAI, Takeshi
酒井 健
YOSHIKAWA, Kazuhiro
吉川 和博
YOSHIDA, Tatsuro
吉田 達郎
SHIRAI, Yasuyuki
白井 泰雪
Inventors: SAKAI, Takeshi
酒井 健
YOSHIKAWA, Kazuhiro
吉川 和博
YOSHIDA, Tatsuro
吉田 達郎
SHIRAI, Yasuyuki
白井 泰雪
Title: ETCHING METHOD
Abstract:
Provided is an etching method for an Si substrate which is capable of performing etching in a surface state that is highly superior in smoothness and planarity across a wide area. On the basis of measurement values obtained by measuring, during processing, a liquid temperature at one or more predetermined positions along a direction of movement of etching liquid supplied to the surface of a Si substrate, the temperature of the etching liquid flowing on the surface is controlled with a rough degree of precision, etching processing is performed using an alkaline-based etching liquid, and next, finishing etching processing is performed using an acid-based etching liquid.