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1. (WO2015043957) MIRROR BLANK FOR EUV LITHOGRAPHY WITHOUT EXPANSION UNDER EUV RADIATION

Pub. No.:    WO/2015/043957    International Application No.:    PCT/EP2014/069302
Publication Date: Fri Apr 03 01:59:59 CEST 2015 International Filing Date: Thu Sep 11 01:59:59 CEST 2014
IPC: C03C 3/06
C03B 19/14
G02B 5/08
G03F 7/20
Applicants: HERAEUS QUARZGLAS GMBH & CO. KG
Inventors: BECKER, Klaus
THOMAS, Stephan
Title: MIRROR BLANK FOR EUV LITHOGRAPHY WITHOUT EXPANSION UNDER EUV RADIATION
Abstract:
The present invention relates to a substrate for an EUV mirror which has a zero crossing temperature profile that is different from the statistical distribution. The invention further relates to a method for producing a substrate for an EUV mirror and to the use thereof, the zero crossing temperature profile in the substrate being adapted to the operating temperature of the mirror. The invention also relates to a lithography method using said substrate.